Miyazaki Seiichi | Graduate School of Advanced Sciences of Matter, Hiroshima University
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概要
関連著者
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Miyazaki Seiichi
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Miyazaki S
Hiroshima Univ. Higashi‐hiroshima Jpn
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Miyazaki Seiichi
Dept. Of Electrical Engineering Hiroshima University
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Miyazaki Seiichi
Faculty Of Engineering Hiroshima University
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Miyazaki S
Department Of Electrical Engineering Hiroshima University
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Miyazaki S
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Miyazaki Seiichi
Graduate School Of Advanced Sciences And Matters Hiroshima University
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Miyazaki Seiichi
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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MIYAZAKI Seiichi
Hiroshima University
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Miyazaki Seiichi
Hiroshima Univ.
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HIROSE Masataka
Department of Electrical Engineering, Hiroshima University
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Ikeda M.
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Miyazaki Seiichi
Department Of Electrical Engineering Hiroshima University
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Murakami H.
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Miyazaki Seiichi
Department Of Electrical Engineering Graduate School Of Advanced Sciences And Matter Hiroshima Unive
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Murakami H
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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MIYAZAKI S.
Graduate School of Advanced Sciences of Matter, Hiroshima Univ.
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Higashi S.
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Hirose Minoru
Process Development Division Fujitsu Limited
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Hirose M
Materials Research Center Tdk Corporation
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MAKIHARA Katsunori
Hiroshima University
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HIGASHI Seiichiro
Graduate School of Advanced Sciences of Matter, Hiroshima University
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IKEDA Mitsuhisa
Hiroshima University
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Makihara Katsunori
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Ikeda Mitsuhisa
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Makihara Katsunori
Hiroshima Univ. Higashihiroshima‐shi Jpn
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Makihara Katsunori
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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MURAKAMI Hideki
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Murakami Hideki
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Murakami Hideki
Department Of Semiconductor Electronics And Integration Science Graduate School Of Advanced Sciences
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Miyazaki S
Graduate School Of Advanced Sciences And Matters Hiroshima University
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MURAKAMI H.
Department of Physics, Rikkyo University
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Makihara K.
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Nara Y.
Semiconductor Leading Edge Technology Inc.
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Hirose Masataka
Advanced Semiconductor Research Center National Institute Of Advanced Industrial Science And Technol
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OHTA Akio
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Ohta Akiko
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Ohta Akio
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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INUMIYA S.
Semiconductor Leading Edge Technologies, Inc. (Selete)
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NARA Y.
Selete
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Inumiya S.
Semicondutor Leading Edge Technologies Inc.
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Sakikawa Nobuki
Department of Electrical Engineering, Hiroshima University
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Pei Y.
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Pei Y.
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Mahboob S.
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Kuroda A.
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Kohno Atsushi
Department of Radiology, Kobe University
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Kohno A
Operative Dentistry I Tsurumi University School Of Dental Medicine
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Kohno Atsushi
Department Of Diagnostic Imaging Cancer Institute Hospital Japanese Foundation Of Cancer Research
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MIZUBAYASHI Wataru
Department of Electrical Engineering, Hiroshima University
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Katayama K.
Graduate School of Advanced Sciences of Matter, Hiroshima University
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SHIMANOE Kazuhiro
Hiroshima University
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Shimanoe Kazuhiro
Graduate School of Advanced Sciences of Matter, Hiroshima University
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MURAGUCHI Masakazu
Center for Interdisciplinary Research, Tohoku University
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ENDOH Tetsuo
Center for Interdisciplinary Research, Tohoku University
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Sakurai Yoko
Graduate School of Pure and Applied Science, University of Tsukuba
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Takada Yukihiro
Graduate School of Pure and Applied Science, University of Tsukuba
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Nomura Shintaro
Graduate School of Pure and Applied Science, University of Tsukuba
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Shiraishi Kenji
Graduate School of Pure and Applied Science, University of Tsukuba
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Makihara Katsuonri
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Shigeta Yasuteru
Graduate School of Life Science, University of Hyogo
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WEI Guobin
Graduate School of Advanced Sciences of Matter, Hiroshima University
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GOTO Yuta
Graduate School of Advanced Sciences of Matter, Hiroshima University
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OHTA Akiko
Graduate School of Advanced Sciences of Matter, Hiroshima University
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KANME Daisuke
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Takada Yukihiro
Univ. Tsukuba Tsukuba‐shi Jpn
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KAWANAMI Akira
Hiroshima University
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Sakurai Yoko
Graduate School Of Pure And Applied Science University Of Tsukuba
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Endoh Tetsuo
Center For Interdisciplinary Research Tohoku University
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Kawanami Akira
Hiroshima Univ. Higashihiroshima‐shi Jpn
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Goto Yuta
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Wei Guobin
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Kanme Daisuke
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Kohno A
Hiroshima Univ. Higashi-hiroshima Jpn
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Nomura Shintaro
Graduate School Of Pure And Applied Science University Of Tsukuba
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Murakami Hideki
Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer
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Kaku Hirotaka
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Hashimoto M
Department Of Macromolecular Science And Engineering Graduate School Of Science And Technology Kyoto
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Hashimoto M
Department Of Polymer Science And Engineering Faculty Of Textile Science Kyoto Institute Of Technolo
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SHIBAGUCHI Taku
Graduate School of Advanced Sciences and Matters, Hiroshima University
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FUKUDA Masatoshi
Department of Electrical Engineering, Hiroshima University
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Kawanami Akira
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Tamao Masaki
Department of Electrical Engineering, Hiroshima University
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SHISHIDA Yoshinori
Department of Electrical Engineering, Hiroshima University
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Shishida Yoshinori
Department Of Electrical Engineering Hiroshima University
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Hata H.
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Kaku H.
Graduate School of Advanced Sciences of Matter, Hiroshima University
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NAGAI T.
Graduate School of Advanced Sciences of Matter, Hiroshima University
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知京 豊裕
物材機構
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知京 豊裕
(独)物質・材料研究機構
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赤坂 泰志
東京エレクトロン株式会社
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知京 豊裕
金属材料技術研究所
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YOSHIDA Yuichi
Department of Dermatology, School of Medicine, Fukuoka University
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Ikeda Makoto
Faculty Of Technology Tokyo University Of Agriculture And Technology
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山田 啓作
筑波大学数理物質科学研究科
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白石 賢二
筑波大学
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MURAKAMI Hideki
Department of Geology, Faculty of Science, Kochi University
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大毛利 健治
早稲田大学ナノ理工学研究機構
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Murakami H
Institute For Molecular Science
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NAKAGAWA Hiroshi
Graduate School of Information Sciences, Hiroshima City University
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Ikeda M
Sony Corporation Research Center
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Kohno Atsushi
Department Of Electrical Engineering Hiroshima University
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Okamoto Kazuya
Central Research Laboratory Nikon Corporation
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Yoshida T
Department Of Electronic Engineering Faculty Of Engineering Takushoku University
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Yoshida Tomio
Information Equipment Research Laboratory Matsushita Electric Industrial Co. Ltd.
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PEI Yanli
Graduate School of Advanced Sciences and Matter, Hiroshima University
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INUMIYA Seiji
Semiconductor Leading Edge Technologies, Inc.
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NARA Yasuo
Semiconductor Leading Edge Technologies, Inc.
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OKAMOTO Yoshihiro
Graduate School of Advanced Sciences and Matter, Hiroshima University
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MORIWAKI Yoshikazu
Graduate School of Advanced Sciences and Matter, Hiroshima University
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FUJITAKE Masafumi
Graduate School of Advanced Sciences and Matter, Hiroshima University
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AZUMA Daisuke
Graduate School of Advanced Sciences and Matter, Hiroshima University
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Pei Yanli
Graduate School Of Advanced Sciences And Matter Hiroshima University
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Inumiya Seiji
Semiconductor Leading Edge Technologies Inc. (selete)
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Inumiya Seiji
Semiconductor Company Toshiba Corporation
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Azuma Daisuke
Graduate School Of Advanced Sciences And Matter Hiroshima University
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YOKOYAMA Seiji
School of Material Science, Japan Advanced Institute of Science and Technology
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FUKUDA M.
Department of Physics, Osaka Univ.
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YOKOYAMA Shin
Research Center for Nanodevices and Systems, Hiroshima University
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Endoh Testuo
Center For Interdisciplinary Research Tohoku University
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TAKAGI Shin-ichi
Advanced LSI Technology Laboratory, Toshiba Corporation
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Nara Yasuo
Semiconductor Leading Edge Technologies Inc. (selete)
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Yokoyama Seiji
School Of Material Science Japan Advanced Institute Of Science And Technology
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YOSHIDA Takeshi
Department of Gastroenterology, Hokkaido University Graduate School of Medicine
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Murakami Hisashi
Department Of Applied Chemistry Graduate School Of Engineering Tokyo University Of Agriculture And T
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Yokoi Hirokazu
Graduate School Of Life Science And Systems Engineering Kyushu Institute Of Technology
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Yokoi Hirokazu
Graduate School Of Advanced Sciences And Matters Hiroshima University:(present Address)matsushita Co
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IKEDA Mitsuhisa
Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima Univ
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MIYAZAKI Seiichiand
Department of Electrical Engineering, Hiroshima University
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SHIBA Kazutoshi
Department of Electrical Engineering, Hiroshima University
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DEKI Hidenori
Department of Electrical Engineering, Hiroshima University
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NAKAGAWA Kouji
Department of Electrical Engineering, Hiroshima University
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NAKAGAWA Kazuyuki
Department of Electrical Engineering, Hiroshima University
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Inayoshi Muneto
Department Of Quantum Engineering School Of Engineering Nagoya Univeristy
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OKAMOTO Katsuhiko
Department of Electrical Engineering, Hiroshima University
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MAEDA Jun-ichi
Research Center for Nanodevices and Systems, Hiroshima University
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SASAKI Yasushi
Research Center for Nanodevices and Systems, Hiroshima University
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DIETZ Nikolaus
Research Center for Nanodevices and Systems, Hiroshima University
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SHIBAHARA Kentaro
Research Center for Nanodevices and Systems, Hiroshima University
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MIYAZAKI Seiichi
Faculty of Engineering, Hiroshima University
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HIROSE Masataka
Faculty of Engineering, Hiroshima University
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ITOKAWA Hiroshi
Department of Electrical Engineering, Hiroshima University
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Dietz Nikolaus
Research Center For Nanodevices And Systems Hiroshima University:department Of Physics North Carolin
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Maeda Jun-ichi
Research Center For Nanodevices And Systems Hiroshima University
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知京 豊裕
(独)物質・材料研究機構 半導体材料センター
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YAMAKAWA Shinpei
Department of Electrical Engineering, Hiroshima University
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Yoshida Tomoaki
Department Of Materials Science Faculty Of Engineering Tohoku University
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SHIRAISHI K.
Graduate School of Pure and Applied Sciences, Univ. of Tsukuba
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AKASAKA Y.
Semiconductor Leading Edge Technology Inc.
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CHIKYOW T.
National Institute of Materials Science
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YAMABE K.
Graduate School of Pure and Applied Sciences, Univ. of Tsukuba
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YAMADA K.
Nanotechnology Research Laboratories, Waseda University
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UMEZAWA N.
Advanced Electronic Materials Center, National Institute for Materials Science
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UEDONO A.
Graduate School of Pure and Applied Sciences, Univ. of Tsukuba
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HASUNUMA R.
Graduate School of Pure and Applied Sciences, Univ. of Tsukuba
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MOMIDA H.
Computational Materials Science Center, National Institute for Materials Science
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OHNO T.
Computational Materials Science Center, National Institute for Materials Science
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OHMORI K.
Advanced Electronic Materials Center, National Institute for Materials Science
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CHIKYOW T.
Advanced Electronic Materials Center, National Institute for Materials Science
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山田 啓作
筑波大学大学院数理物質科学研究科
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SUGIMURA Masashi
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Sugimura Masashi
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Yamakawa Shinpei
Department Of Electrical Engineering Hiroshima University
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Yoshida Toshiyuki
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Fujitake Masafumi
Graduate School Of Advanced Sciences And Matter Hiroshima University
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Nakagawa Kazuyuki
Department Of Electrical Engineering Hiroshima University
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Moriwaki Yoshikazu
Graduate School Of Advanced Sciences And Matter Hiroshima University
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Ito M
Wakayama Univ. Wakayama Jpn
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Yokoyama Shin
Research Center For Integrated Systems Hiroshima University
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Yokoyama S
Research Center For Nanodevices And Systems Hiroshima University
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Endoh Tetsuo
Tohoku Univ. Sendai‐shi Jpn
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Yoshida T
Matsushita Electric Co. Tochigi Jpn
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Murakami H
Department Of Applied Chemistry Graduate School Of Engineering Tokyo University Of Agriculture And T
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Ikeda M
Toshiba Corp. Kawasaki Jpn
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SHIBA Kazutoshi
NEC Electronics Corporation
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Shibahara K
Research Center For Nanodevices And Systems Hiroshima University
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Uedono A.
Graduate School Of Pure And Applied Sciences Univ. Of Tsukuba
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Takagi Shin-ichi
Advanced Lsi Technology Laboratory Research & Development Center Toshiba Corporation
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Deki Hidenori
Department Of Electrical Engineering Hiroshima University:(present Address) Department Of Electrical
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Hirose Masataka
Advanced Semiconductor Research Center National Institute Of Advanced Industrial Science And Technol
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OKAMOTO Kimiharu
JEOL Limited
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MIZUBAYASHI Wataru
Graduate School of Advanced Sciences and Matters, Hiroshima University
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SUYAMA Atsushi
Graduate School of Advanced Sciences and Matters, Hiroshima University
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Yoshida T
Fukuoka Univ. Fukuoka Jpn
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Itokawa Hiroshi
Department Of Electrical Engineering Hiroshima University
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大毛利 健治
早稲田大学ナノ理工学研究機構ナノテクノロジー研究所
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MATSUMOTO R.
Graduate School of Advanced Sciences of Matter, Hiroshima University
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SHIMANOE K.
Graduate School of Advanced Sciences of Matter, Hiroshima University
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OKUYAMA K.
Graduate School of Advanced Sciences of Matter, Hiroshima University
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OHTA A.
Grad. School of AdSM, Hiroshima Univ.
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YOSHINAGA H.
Grad. School of AdSM, Hiroshima Univ.
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MURAKAMI H.
Grad. School of AdSM, Hiroshima Univ.
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AZUMA D.
Grad. School of AdSM, Hiroshima Univ.
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MUNETAKA Y.
Grad. School of AdSM, Hiroshima Univ.
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HIGASHI S.
Grad. School of AdSM, Hiroshima Univ.
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MIYAZAKI S.
Grad. School of AdSM, Hiroshima Univ.
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AOYAMA T.
Fujitsu Laboratories Ltd.
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KOSAKA K.
Fujitsu Laboratories Ltd.
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SHIBAHARA K.
Grad. School of AdSM, Hiroshima Univ.
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SHIMIZU Y.
Graduate School of Advanced Sciences of Matter, Hiroshima University
著作論文
- Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories(Session4A: Nonvolatile Memory)
- Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor(Session 9B : Nano-Scale devices and Physics)
- Characterization of Mg Diffusion into HfO_2/SiO_2/Si(100) Stacked Structures and Its Impact on Detect State Densities(Session 7A : Gate Oxides)
- The Impact of H_2 Anneal on Resistive Switching in Pt/TiO_2/Pt Structure(Session 2A : Memory 1)
- Characterization of Mg Diffusion into HfO_2/SiO_2/Si(100) Stacked Structures and Its Impact on Detect State Densities(Session 7A : Gate Oxides)
- The Impact of H_2 Anneal on Resistive Switching in Pt/TiO_2/Pt Structure(Session 2A : Memory 1)
- Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal-Gate Capacitors(Ultra-Thin Gate Insulators,Fundamentals and Applications of Advanced Semiconductor Devices)
- Characterization of Germanium Nanocrystallites Grown on SiO_2 by a Conductive AFM Probe Technique(Nanomaterials and Quantum-Effect Devices, Fundamental and Application of Advanced Semiconductor Devices)
- Characterization of Atom Diffusion in Polycrystalline Si/SiGe/Si Stacked Gate(Si Devices and Processes, Fundamental and Application of Advanced Semiconductor Devices)
- Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor(Session 9B : Nano-Scale devices and Physics)
- Charging and Discharging Characteristics of Stacked Floating Gates of Silicon Quantum Dots(Nanomaterials and Quantum-Effect Devices, Fundamental and Application of Advanced Semiconductor Devices)
- Quantitative Analysis of Oxide Voltage and Field Dependence of Time-Dependent Dielectric Soft Breakdown and Hard Breakdown in Ultrathin Gate Oxides
- Memory Operation of Silicon Quantum-Dot Floating-GateMetal-Oxide-Semiconductor Field-Effect Transistors : Semiconductors
- Analysis of Tunnel Current through Ultrathin Gate Oxides
- Luminescence Study of Thermally-Oxidized Porous Si under Subgap or Overgap Excitation
- Gap-State Distributions in Hydrogenated Amorphous Silicon-Germanium Evaluated Using Capacitance-Voltage Method
- High-Rate GaAs Epitaxial Lift-Off Technique for Optoelectronic Integrated Circuits
- Modeling of Soft Breakdown in Ultrathin Gate Oxides
- Analytical Modelling of Quasi-Breakdown of Ultrathin Gate Oxides under Constant Current Stressing
- Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots
- Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots
- Electrical Properties of Highly Crystallized Ge : H Thin Films Grown from VHF Inductively-Coupled Plasma of H_2-diluted GeH_4(Session9A: Silicon Devices IV)
- Electrical Properties of Highly Crystallized Ge : H Thin Films Grown from VHF Inductively-Coupled Plasma of H_2-diluted GeH_4(Session9A: Silicon Devices IV)
- Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories(Session4A: Nonvolatile Memory)
- Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO_2 Structure as Evaluated by AFM/KFM
- Structural Inhomogeneity in Hydrogenated Amorphous Silicon in Relation to Photoelectric Properties and Defect Density
- Deposition of Hydrogenated Amorphous Silicon under Intermittent Substrate Bias
- In Situ Monitoring of Silicon Surfaces During Reactive Ion Etching
- Correlation between Light-Induced Degradation and Structural Inhomogeneities in Hydrogenated Amorphous Silicon Prepared under High-Rate Deposition Conditions
- Calculation of Subband States in a Metal-Oxide-Semiconductor Inversion Layer with a Realistic Potential Profile
- Analytical Modeling of Metal Oxide Semiconductor Inversion-Layer Capacitance
- Quasibound States of Electric Field-Induced Quantum Wells in Silicon Subsurface
- Resonant Tunneling through SiO_2/Si Quantum Dot/SiO_2 Double Barrier Structures
- Fine SiO_2 Pattern Generation by Electron Beam Direct Writing onto Polysiloxene-Based Thin Films and Its Application to Etch Mask
- Guiding Principle of Energy Level Controllability of Silicon Dangling Bond in HfSiON
- Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors(Session 9A Silicon Devices VI,AWAD2006)
- Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors(Session 9A Silicon Devices VI)
- Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors
- Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors
- Evaluation of Electronic Defect States at Poly-Si/HfO_2 interface by Photoelectron Yield Spectroscopy
- Electrical Characterization of Aluminum-Oxynitride Stacked Gate Dielectrics Prepared by a Layer-by-Layer Process of Chemical Vapor Deposition and Rapid Thermal Nitridation(Si Devices and Processes, Fundamental and Application of Advanced
- Electrical Detection of Silicon Binding Protein-Protein A Using a p-MOSFET Sensor
- Electrical Detection of Silicon Binding Protein-Protein A Using a p-MOSFET Sensor
- Electrical detection of Si-tagged Proteins on HF-last Si(100) and Thermally grown SiO_2 surfaces(Session5B: Emerging Devices III)
- Electrical detection of Si-tagged Proteins on HF-last Si(100) and Thermally grown SiO_2 surfaces(Session5B: Emerging Devices III)
- Characterization of Multistep Electron Charging and Discharging of Silicon-Quantum-Dots Floating Gate by Applying Pulsed Gate Biases
- Self-Assembling Formation of Ni Nanodots on SiO_2 Induced by Remote H_2-plasma Treatment and Their Electrical Charging Characteristics
- Electroluminescence from Multiple-Stacked Structures of Impurity Doped Si Quantum Dots
- Evaluation of Chemical Structures and Work Function of NiSi near the Interface between Nickel Silicide and SiO_2
- Characterization of MultiStep Electron Charging to Silicon-Quantum-Dot Floating Gate by Applying Pulsed Gate Biases
- Photo-Induced Electron Charging to Silicon-Quantum-Dot Floating Gate in Metal-Oxide-Semiconductor Memories
- Charge Injection Characteristics of a Si Quantum Dot Floationg Gate in MOS Structures
- Memory Operation and Electron Charging Characteristics of Silicon Quantum-Dot Floating-Gate MOSFETs
- Memory Operation and Electron Charging Characteristics of Silicon Quantum-Dot Floating-Gate MOSFETs
- Etch Damage of n^+ Poly-Si Gate Side Wall as Evaluated by Gate Tunnel Leakage Current
- Transient Characteristics of Electron Charging in Si-Quantum-Dot Floating Gate MOS Memories
- Single Electron Charging to a Si Quantum Dot Floating Gate in MOS Structures
- Quantum Confinement Effect in Self-Assembled, Nanometer Silicon Dots
- Electron Charging to Silicon Quantum Dots as a Floating Gate in MOS Capacitors