Ikeda Mitsuhisa | Graduate School of Advanced Sciences of Matter, Hiroshima University
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概要
- IKEDA Mitsuhisaの詳細を見る
- 同名の論文著者
- Graduate School of Advanced Sciences of Matter, Hiroshima Universityの論文著者
関連著者
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Ikeda Mitsuhisa
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Miyazaki Seiichi
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Miyazaki Seiichi
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Miyazaki Seiichi
Graduate School Of Advanced Sciences And Matters Hiroshima University
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Ikeda Mitsuhisa
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Ikeda Mitsuhisa
Graduate School of Advanced Science and Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Miyazaki Seiichi
Graduate School of Advanced Science and Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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IKEDA Mitsuhisa
Hiroshima University
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Miyazaki Seiichi
Hiroshima Univ.
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Makihara Katsuonri
Graduate School Of Advanced Sciences Of Matter Hiroshima University
著作論文
- Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories(Session4A: Nonvolatile Memory)
- Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor(Session 9B : Nano-Scale devices and Physics)
- Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor(Session 9B : Nano-Scale devices and Physics)
- Charging and Discharging Characteristics of Stacked Floating Gates of Silicon Quantum Dots(Nanomaterials and Quantum-Effect Devices, Fundamental and Application of Advanced Semiconductor Devices)
- Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots
- Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots
- Electrical Properties of Highly Crystallized Ge : H Thin Films Grown from VHF Inductively-Coupled Plasma of H_2-diluted GeH_4(Session9A: Silicon Devices IV)
- Electrical Properties of Highly Crystallized Ge : H Thin Films Grown from VHF Inductively-Coupled Plasma of H_2-diluted GeH_4(Session9A: Silicon Devices IV)
- Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories(Session4A: Nonvolatile Memory)
- Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO_2 Structure as Evaluated by AFM/KFM