Makihara Katsunori | Graduate School Of Advanced Sciences Of Matter Hiroshima University
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概要
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- 同名の論文著者
- Graduate School Of Advanced Sciences Of Matter Hiroshima Universityの論文著者
関連著者
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MAKIHARA Katsunori
Hiroshima University
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Miyazaki Seiichi
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Miyazaki Seiichi
Hiroshima Univ.
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Makihara Katsunori
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Miyazaki Seiichi
Graduate School Of Advanced Sciences And Matters Hiroshima University
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Makihara Katsuonri
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Miyazaki Seiichi
Graduate School Of Engineering Nagoya University
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Makihara Katsunori
Graduate School of Advanced Science and Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Miyazaki Seiichi
Graduate School of Advanced Science and Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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MIYAZAKI Seiichi
Hiroshima University
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Makihara Katsunori
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Miyazaki Seiichi
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Makihara Katsunori
Hiroshima Univ. Higashihiroshima‐shi Jpn
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IKEDA Mitsuhisa
Hiroshima University
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Ikeda Mitsuhisa
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Ikeda Mitsuhisa
Graduate School of Advanced Science and Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Ikeda Mitsuhisa
Graduate School of Advanced Sciences of Matter, Hiroshima University
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HIGASHI Seiichiro
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Higashi Seiichiro
Department Of Semiconductor Electronics And Integration Science Graduate School Of Advanced Sciences
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Higashi Seiichiro
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Higashi Seiichiro
Graduate School of Advanced Science of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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MURAKAMI Hideki
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Murakami Hideki
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Murakami Hideki
Graduate School Of Advanced Sciences And Matters Hiroshima University
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GOTO Yuta
Graduate School of Advanced Sciences of Matter, Hiroshima University
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OHTA Akio
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Goto Yuta
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Ohta Akio
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Wei Guobin
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Murakami Hideki
Department Of Semiconductor Electronics And Integration Science Graduate School Of Advanced Sciences
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SHIMANOE Kazuhiro
Hiroshima University
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Shimanoe Kazuhiro
Graduate School of Advanced Sciences of Matter, Hiroshima University
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WEI Guobin
Graduate School of Advanced Sciences of Matter, Hiroshima University
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OHTA Akiko
Graduate School of Advanced Sciences of Matter, Hiroshima University
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KAWANAMI Akira
Hiroshima University
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Ohta Akiko
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Kawanami Akira
Hiroshima Univ. Higashihiroshima‐shi Jpn
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Kaku Hirotaka
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Kawanami Akira
Graduate School of Advanced Sciences of Matter, Hiroshima University
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MURAGUCHI Masakazu
Center for Interdisciplinary Research, Tohoku University
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ENDOH Tetsuo
Center for Interdisciplinary Research, Tohoku University
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Takada Yukihiro
Graduate School of Pure and Applied Science, University of Tsukuba
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Nomura Shintaro
Graduate School of Pure and Applied Science, University of Tsukuba
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Takada Yukihiro
Univ. Tsukuba Tsukuba‐shi Jpn
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Sakurai Yoko
Graduate School Of Pure And Applied Science University Of Tsukuba
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Endoh Tetsuo
Center For Interdisciplinary Research Tohoku University
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Nomura Shintaro
Graduate School Of Pure And Applied Science University Of Tsukuba
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OKAMOTO Yoshihiro
Graduate School of Advanced Sciences and Matter, Hiroshima University
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Endoh Testuo
Center For Interdisciplinary Research Tohoku University
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Endoh Tetsuo
Tohoku Univ. Sendai‐shi Jpn
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Muraguchi Masakazu
Tohoku Univ. Sendai‐shi Jpn
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Shigeta Yasuteru
Department Of Chemistry Graduate School Of Science Osaka Univerity
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Shigeta Yasuteru
Graduate School Of Life Science University Of Hyogo
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Muraguchi Masakazu
Center For Interdisciplinary Research Tohoku University
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Muraguchi Masakazu
Center For Interdisciplinary Research Tohoku University:center For Spintronics Integrated Systems To
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Shiraishi Kenji
Graduate School Of Applied Physics Univ Of Tsukuba
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Okamoto Yoshihiro
Graduate School Of Advanced Sciences And Matter Hiroshima University
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Takada Yukihiro
Graduate School Of Pure And Applied Science University Of Tsukuba
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Shiraishi Kenji
Graduate School Of Pure And Applied Science University Of Tsukuba
著作論文
- Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories(Session4A: Nonvolatile Memory)
- The Impact of H_2 Anneal on Resistive Switching in Pt/TiO_2/Pt Structure(Session 2A : Memory 1)
- The Impact of H_2 Anneal on Resistive Switching in Pt/TiO_2/Pt Structure(Session 2A : Memory 1)
- Characterization of Germanium Nanocrystallites Grown on SiO_2 by a Conductive AFM Probe Technique(Nanomaterials and Quantum-Effect Devices, Fundamental and Application of Advanced Semiconductor Devices)
- Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots
- Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots
- Electrical Properties of Highly Crystallized Ge : H Thin Films Grown from VHF Inductively-Coupled Plasma of H_2-diluted GeH_4(Session9A: Silicon Devices IV)
- Electrical Properties of Highly Crystallized Ge : H Thin Films Grown from VHF Inductively-Coupled Plasma of H_2-diluted GeH_4(Session9A: Silicon Devices IV)
- Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories(Session4A: Nonvolatile Memory)
- Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO_2 Structure as Evaluated by AFM/KFM
- Impact of Annealing Ambience on Resistive Switching on Pt/TiO_2/Pt Structure
- Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor