Electrical Properties of Highly Crystallized Ge : H Thin Films Grown from VHF Inductively-Coupled Plasma of H_2-diluted GeH_4(Session9A: Silicon Devices IV)

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概要

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• Formation of highly crystallized Ge films on quartz substrate from VHF-ICP of GeH_4 and electrical properties of the films have been investigated. From the Hall measurements, we found that the films show p-type conduction and that carrier concentrations for the films of 92 and 98% in the crystallinity are 2.9×10^<19> and 5.7×10^<18>cm^<-3>, respectively. In addition, we observed a carrier mobility of 22cm^2/Vs for the film with 98% crystallinity, which is 〜2 times higher compared to 12cm^2/Vs of 92% case. This result suggests that defects in the films play a role on carrier type and transport properties.

• 社団法人電子情報通信学会の論文
• 2008-07-02

著者

• MAKIHARA Katsunori

  Hiroshima University

• IKEDA Mitsuhisa

  Hiroshima University

• MIYAZAKI Seiichi

  Hiroshima University

• Makihara Katsunori

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• Ikeda Mitsuhisa

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• Miyazaki Seiichi

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• HIGASHI Seiichiro

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• Makihara Katsunori

  Hiroshima Univ. Higashihiroshima‐shi Jpn

• Miyazaki Seiichi

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Miyazaki Seiichi

  Hiroshima Univ.

• Kaku Hirotaka

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Makihara Katsunori

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Miyazaki Seiichi

  Graduate School Of Advanced Sciences And Matters Hiroshima University

• Ikeda Mitsuhisa

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Higashi Seiichiro

  Department Of Semiconductor Electronics And Integration Science Graduate School Of Advanced Sciences

• Makihara Katsuonri

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Higashi Seiichiro

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Miyazaki Seiichi

  Graduate School Of Engineering Nagoya University

• Makihara Katsunori

  Graduate School of Advanced Science and Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

• Ikeda Mitsuhisa

  Graduate School of Advanced Science and Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

• Higashi Seiichiro

  Graduate School of Advanced Science of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

• Miyazaki Seiichi

  Graduate School of Advanced Science and Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

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