Formation of cobalt and cobalt-silicide nanodots on ultrathin SiO2 induced by remote hydrogen plasma (Special issue: Dry process)
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
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MAKIHARA Katsunori
Hiroshima University
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Makihara Katsunori
Hiroshima Univ. Higashihiroshima‐shi Jpn
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Kawanami Akira
Hiroshima Univ. Higashihiroshima‐shi Jpn
関連論文
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- Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories
- Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories(Session4A: Nonvolatile Memory)
- The Impact of H_2 Anneal on Resistive Switching in Pt/TiO_2/Pt Structure(Session 2A : Memory 1)
- The Impact of H_2 Anneal on Resistive Switching in Pt/TiO_2/Pt Structure(Session 2A : Memory 1)
- Characterization of Germanium Nanocrystallites Grown on SiO_2 by a Conductive AFM Probe Technique(Nanomaterials and Quantum-Effect Devices, Fundamental and Application of Advanced Semiconductor Devices)
- Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor(Session 9B : Nano-Scale devices and Physics)
- Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots
- Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots
- Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots
- Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories
- Electrical Properties of Highly Crystallized Ge : H Thin Films Grown from VHF Inductively-Coupled Plasma of H_2-diluted GeH_4(Session9A: Silicon Devices IV)
- Electrical Properties of Highly Crystallized Ge : H Thin Films Grown from VHF Inductively-Coupled Plasma of H_2-diluted GeH_4(Session9A: Silicon Devices IV)
- Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories(Session4A: Nonvolatile Memory)
- Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO_2 Structure as Evaluated by AFM/KFM
- Formation of cobalt and cobalt-silicide nanodots on ultrathin SiO2 induced by remote hydrogen plasma (Special issue: Dry process)
- Self-assembling formation of Ni nanodots on SiO2 induced by remote H2 plasma treatment and their electrical charging characteristics (Special issue: Solid state devices and materials)
- Impact of Annealing Ambience on Resistive Switching on Pt/TiO_2/Pt Structure
- Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor