Evaluation of Electronic Defect States at Poly-Si/HfO_2 interface by Photoelectron Yield Spectroscopy
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概要
- 論文の詳細を見る
- 2004-09-15
著者
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MIYAZAKI Seiichi
Hiroshima University
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Miyazaki Seiichi
Graduate School of Advanced Sciences of Matter, Hiroshima University
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HIGASHI Seiichiro
Graduate School of Advanced Sciences of Matter, Hiroshima University
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OHTA Akio
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Ohta Akiko
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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NAKAGAWA Hiroshi
Graduate School of Information Sciences, Hiroshima City University
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Ohta Akio
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Miyazaki Seiichi
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Miyazaki Seiichi
Hiroshima Univ.
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SHIBAGUCHI Taku
Graduate School of Advanced Sciences and Matters, Hiroshima University
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SUGIMURA Masashi
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Sugimura Masashi
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Miyazaki Seiichi
Graduate School Of Advanced Sciences And Matters Hiroshima University
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Higashi Seiichiro
Department Of Semiconductor Electronics And Integration Science Graduate School Of Advanced Sciences
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Shibaguchi Taku
Graduate School Of Advanced Sciences And Matters Hiroshima University
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Shibaguchi Taku
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Higashi Seiichiro
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Miyazaki Seiichi
Graduate School Of Engineering Nagoya University
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Nakagawa Hiroshi
Graduate School Of Information Sciences Hiroshima City University
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Nakagawa Hiroshi
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Higashi Seiichiro
Graduate School of Advanced Science of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Miyazaki Seiichi
Graduate School of Advanced Science and Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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