Impact of Rapid Thermal O_2 Anneal on Dielectric Stack Structures of Hafnium Aluminate and Silicon Dioxide Formed on Si(100)
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-11-30
著者
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OHTA Akio
Department of Chemistry and Chemical Engineering, Faculty of Engineering, Kanazawa University
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MURAKAMI Hideki
Department of Geology, Faculty of Science, Kochi University
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Ohta Akiko
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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NAKAGAWA Hiroshi
Department of Pediatrics, Sendai City Hospital
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Miyazaki Seiichi
Department Of Electrical Engineering Hiroshima University
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Murakami Hideki
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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HIGASHI Seiichirou
Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima Univ
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KAWAHARA Takayuki
Semiconductor Leading Edge Technologies, Inc.
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TORII Kazuyoshi
Semiconductor Leading Edge Technologies, Inc.
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Torii Kazuyoshi
Semiconductor Leading Edge Technologies Inc.
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Kawahara Takayuki
Semiconductor Leading Edge Technologies Inc.
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