Charging and Discharging Characteristics of Stacked Floating Gates of Silicon Quantum Dots(Nanomaterials and Quantum-Effect Devices, <Special Section>Fundamental and Application of Advanced Semiconductor Devices)

スポンサーリンク

概要

• 論文の詳細を見る

• We have fabricated Al-gate MOS capacitors with a Si quantum-dots (Si-QDs) floating gate, the number of dots was changed in the range of 1.6-4.8×10^<11>cm^<-2> in areal density with repeating the formation of Si dots and their surface oxidation a couple of times. The capacitance-voltage (C-V) characteristics of Si-QDs floating gate MOS capacitors on p-Si(100) confirm that, with increasing number of dots density, the flat-band voltage shift due to electron charging in Si-QDs is increased and the accumulation capacitance is decreased. Also, in the negative bias region beyond the flat-band condition, the voltage shift in the C-V curves due to the emission of valence electrons from intrinsic Si-QDs was observed with no hysterisis presumably because holes generated in Si-QDs can smoothly recombine with electrons tunneling through the 2.8 nm-thick bottom SiO_2. In addition, we have demonstrated the charge retention characteristic improves in the Si-QDs stacked structure.

• 社団法人電子情報通信学会の論文
• 2005-04-01

著者

• IKEDA Mitsuhisa

  Hiroshima University

• MIYAZAKI Seiichi

  Hiroshima University

• Ikeda Mitsuhisa

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• Miyazaki Seiichi

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• MURAKAMI Hideki

  Graduate School of Advanced Sciences of Matter, Hiroshima University

• Miyazaki S

  Graduate School Of Advanced Sciences And Matters Hiroshima University

• Miyazaki Seiichi

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Miyazaki Seiichi

  Hiroshima Univ.

• Murakami Hideki

  Department Of Electrical Engineering Graduate School Of Advanced Sciences Of Matter Hiroshima Univer

• SHIBAGUCHI Taku

  Graduate School of Advanced Sciences and Matters, Hiroshima University

• Miyazaki Seiichi

  Graduate School Of Advanced Sciences And Matters Hiroshima University

• Murakami Hideki

  Graduate School Of Advanced Sciences And Matters Hiroshima University

• Ikeda Mitsuhisa

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Shibaguchi Taku

  Graduate School Of Advanced Sciences And Matters Hiroshima University

• Miyazaki Seiichi

  Graduate School Of Engineering Nagoya University

• Ikeda Mitsuhisa

  Graduate School of Advanced Science and Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

• Miyazaki Seiichi

  Graduate School of Advanced Science and Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

関連論文

• Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots
• Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories
• Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories(Session4A: Nonvolatile Memory)
• Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor(Session 9B : Nano-Scale devices and Physics)
• Characterization of Mg Diffusion into HfO_2/SiO_2/Si(100) Stacked Structures and Its Impact on Detect State Densities(Session 7A : Gate Oxides)
• The Impact of H_2 Anneal on Resistive Switching in Pt/TiO_2/Pt Structure(Session 2A : Memory 1)
• Characterization of Mg Diffusion into HfO_2/SiO_2/Si(100) Stacked Structures and Its Impact on Detect State Densities(Session 7A : Gate Oxides)
• The Impact of H_2 Anneal on Resistive Switching in Pt/TiO_2/Pt Structure(Session 2A : Memory 1)
• Preliminary report on regional resistivity variation inferred from the Network MT investigation in the Shikoku district, southwestern Japan
• Total en bloc spondylectomy for spinal metastases
• Recapping T-saw laminocostotransversoplasty for ventral meningiomas in the thoracic region
• Circumspinal decompression with dekyphosis stabilization for thoracic OPLL
• Finite-element analysis on closing-opening correction osteotomy for angular kyphosis of osteoporotic vertebral fractures
• Invasive features of spinal osteosarcoma obtained from whole-mount sections of total en bloc spondylectomy
• Total en bloc spondylectomy for spinal tumors : improvement of the technique and its associated basic background
• The Transmission of Stress to Grafted Bone Inside a Titanium Mesh Cage Used in Anterior Column Reconstruction After Total Spondylectomy : A Finite-Element Analysis
• Influence on Spinal Cord Blood Flow and Function by Interruption of Bilateral Segmental Arteries at Up to Three Levels : Experimental Study in Dogs
• Influence of Acute Shortening on the Spinal Cord : An Experimental Study
• Letters to the Editor
• Interruption of the Bilateral Segmental Arteries at Several Levels : Influence on Vertebral Blood Flow
• Reconstruction After Total Sacrectomy Using a New Instrumentation Technique : A Biomechanical Comparison
• In-situ Measurement of Temperature Variation in Si Wafer During Millisecond Rapid Thermal Annealing Induced by Thermal Plasma Jet Irradiation
• Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal-Gate Capacitors(Ultra-Thin Gate Insulators,Fundamentals and Applications of Advanced Semiconductor Devices)
• Melting and Solidification of Microcrystalline Si Films Induced by Semiconductor Diode Laser Irradiation
• Characterization of Germanium Nanocrystallites Grown on SiO_2 by a Conductive AFM Probe Technique(Nanomaterials and Quantum-Effect Devices, Fundamental and Application of Advanced Semiconductor Devices)
• Characterization of Atom Diffusion in Polycrystalline Si/SiGe/Si Stacked Gate(Si Devices and Processes, Fundamental and Application of Advanced Semiconductor Devices)
• Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor(Session 9B : Nano-Scale devices and Physics)
• Charging and Discharging Characteristics of Stacked Floating Gates of Silicon Quantum Dots(Nanomaterials and Quantum-Effect Devices, Fundamental and Application of Advanced Semiconductor Devices)
• Multiple-Step Electron Charging in Silicon-Quantum-Dot Floating Gate Metal-Oxide-Semiconductor Memories
• Carrier Depletion Effect in the n^+Poly-Si Gate Side-Wall/SiO_2 Interfaces as Evaluated by Gate Tunnel Leakage Current : Semiconductors
• Quantitative Analysis of Oxide Voltage and Field Dependence of Time-Dependent Dielectric Soft Breakdown and Hard Breakdown in Ultrathin Gate Oxides
• Memory Operation of Silicon Quantum-Dot Floating-GateMetal-Oxide-Semiconductor Field-Effect Transistors : Semiconductors
• Experimental Evidence of Carrier Depletion Effect near n^+Poly-Si Gate Side
• Experimental Evidence of Carrier Depletion Effect near n^+Poly-Si Gate Side Wall/SiO_2 Interfaces for Sub-100nm nMOSFETs
• Charging States of Si Quantum Dots as Detected by AFM/Kelvin Probe Technique
• Analysis of Tunnel Current through Ultrathin Gate Oxides
• Luminescence Study of Thermally-Oxidized Porous Si under Subgap or Overgap Excitation
• Gap-State Distributions in Hydrogenated Amorphous Silicon-Germanium Evaluated Using Capacitance-Voltage Method
• Optical Absorption and Photoluminescence of Self-Assembled Silicon Quantum Dots
• Surface Morphologies of Hydrogenated Amorphous Silicon at the Early Stages of Plasma-Enhanced Chemical Vapor Deposition
• Atomic Scale Morphology of Hydrogen-Termimated Si(100) Surfaces Studied by Fourier-Transform Infrared Attenuated Total Reflection Spectroscopy and Scanning Probe Microscopies
• Comprehensive Understanding of PBTI and NBTI reliability of High-k / Metal Gate Stacks with EOT Scaling to sub-1nm
• Mechanism of Threshold Voltage Reduction and Hole Mobility Enhancement in pMOSFETs Employing Sub-1nm EOT HfSiON by Use of Substrate Fluorine Ion Implantation
• High-Rate GaAs Epitaxial Lift-Off Technique for Optoelectronic Integrated Circuits
• Modeling of Soft Breakdown in Ultrathin Gate Oxides
• Analytical Modelling of Quasi-Breakdown of Ultrathin Gate Oxides under Constant Current Stressing
• Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots
• Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots
• Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots
• Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories
• Electrical Properties of Highly Crystallized Ge : H Thin Films Grown from VHF Inductively-Coupled Plasma of H_2-diluted GeH_4(Session9A: Silicon Devices IV)
• Electrical Properties of Highly Crystallized Ge : H Thin Films Grown from VHF Inductively-Coupled Plasma of H_2-diluted GeH_4(Session9A: Silicon Devices IV)
• Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories(Session4A: Nonvolatile Memory)
• Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO_2 Structure as Evaluated by AFM/KFM
• Hafnium 4f core-level shifts caused by nitrogen incorporation in Hf-based high-k gate dielectrics
• Guiding principle of energy level controllability of silicon dangling bonds in HfSiON (Special issue: Solid state devices and materials)
• Structural Inhomogeneity in Hydrogenated Amorphous Silicon in Relation to Photoelectric Properties and Defect Density
• Deposition of Hydrogenated Amorphous Silicon under Intermittent Substrate Bias
• In Situ Monitoring of Silicon Surfaces During Reactive Ion Etching
• Correlation between Light-Induced Degradation and Structural Inhomogeneities in Hydrogenated Amorphous Silicon Prepared under High-Rate Deposition Conditions
• Calculation of Subband States in a Metal-Oxide-Semiconductor Inversion Layer with a Realistic Potential Profile
• Analytical Modeling of Metal Oxide Semiconductor Inversion-Layer Capacitance
• Quasibound States of Electric Field-Induced Quantum Wells in Silicon Subsurface
• Charging States of Si Quantum Dots as Detected by AFM/Kelvin Probe Technique
• Resonant Tunneling through SiO_2/Si Quantum Dot/SiO_2 Double Barrier Structures
• Fine SiO_2 Pattern Generation by Electron Beam Direct Writing onto Polysiloxene-Based Thin Films and Its Application to Etch Mask
• Guiding Principle of Energy Level Controllability of Silicon Dangling Bond in HfSiON
• Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors(Session 9A Silicon Devices VI,AWAD2006)
• Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors(Session 9A Silicon Devices VI)
• Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors
• Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal Gate Capacitors
• Evaluation of Electronic Defect States at Poly-Si/HfO_2 interface by Photoelectron Yield Spectroscopy
• Special Section on High-κ Gate Dielectrics
• Electrical Characterization of Aluminum-Oxynitride Stacked Gate Dielectrics Prepared by a Layer-by-Layer Process of Chemical Vapor Deposition and Rapid Thermal Nitridation(Si Devices and Processes, Fundamental and Application of Advanced
• Formation of High Crystallinity Silicon Films by High Speed Scanning of Melting Region Formed by Atmospheric Pressure DC Arc Discharge Micro-Thermal-Plasma-Jet and Its Application to Thin Film Transistor Fabrication
• Electrical Detection of Silicon Binding Protein-Protein A Using a p-MOSFET Sensor
• Electrical Detection of Silicon Binding Protein-Protein A Using a p-MOSFET Sensor
• Electrical detection of Si-tagged Proteins on HF-last Si(100) and Thermally grown SiO_2 surfaces(Session5B: Emerging Devices III)
• Electrical detection of Si-tagged Proteins on HF-last Si(100) and Thermally grown SiO_2 surfaces(Session5B: Emerging Devices III)
• Characterization of Multistep Electron Charging and Discharging of Silicon-Quantum-Dots Floating Gate by Applying Pulsed Gate Biases
• Self-Assembling Formation of Ni Nanodots on SiO_2 Induced by Remote H_2-plasma Treatment and Their Electrical Charging Characteristics
• Electroluminescence from Multiple-Stacked Structures of Impurity Doped Si Quantum Dots
• Evaluation of Chemical Structures and Work Function of NiSi near the Interface between Nickel Silicide and SiO_2
• Characterization of MultiStep Electron Charging to Silicon-Quantum-Dot Floating Gate by Applying Pulsed Gate Biases
• Photo-Induced Electron Charging to Silicon-Quantum-Dot Floating Gate in Metal-Oxide-Semiconductor Memories
• Charge Injection Characteristics of a Si Quantum Dot Floationg Gate in MOS Structures
• Memory Operation and Electron Charging Characteristics of Silicon Quantum-Dot Floating-Gate MOSFETs
• Memory Operation and Electron Charging Characteristics of Silicon Quantum-Dot Floating-Gate MOSFETs
• Etch Damage of n^+ Poly-Si Gate Side Wall as Evaluated by Gate Tunnel Leakage Current
• Transient Characteristics of Electron Charging in Si-Quantum-Dot Floating Gate MOS Memories
• Single Electron Charging to a Si Quantum Dot Floating Gate in MOS Structures
• Quantum Confinement Effect in Self-Assembled, Nanometer Silicon Dots
• Electron Charging to Silicon Quantum Dots as a Floating Gate in MOS Capacitors
• Impact of Annealing Ambience on Resistive Switching on Pt/TiO_2/Pt Structure
• Characterization of Mg Diffusion into HfO_2/SiO_2/Si(100) Stacked Structures and Its Impact on Detect State Densities
• Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor
• Characterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF Sputtering
• Cathode Electron Injection Breakdown Model and Time Dependent Dielectric Breakdown Lifetime Prediction in High-$k$/Metal Gate Stack p-Type Metal–Oxide–Silicon Field Effect Transistors
• Comprehensive Analysis of Positive and Negative Bias Temperature Instabilities in High-$k$/Metal Gate Stack Metal–Oxide–Silicon Field Effect Transistors with Equivalent Oxide Thickness Scaling to Sub-1 nm
• Evaluation of Chemical Composition and Bonding Features of Pt/SiOx/Pt MIM Diodes and Its Impact on Resistance Switching Behavior

もっと見る 閉じる

スポンサーリンク