Ikeda M. | Graduate School of Advanced Sciences of Matter, Hiroshima University
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概要
関連著者
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Ikeda M.
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Ikeda M.
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Miyazaki Seiichi
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Miyazaki S
Hiroshima Univ. Higashi‐hiroshima Jpn
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Miyazaki Seiichi
Dept. Of Electrical Engineering Hiroshima University
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Miyazaki Seiichi
Faculty Of Engineering Hiroshima University
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Miyazaki S
Department Of Electrical Engineering Hiroshima University
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Miyazaki S
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Kohno A.
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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MIYAZAKI S.
Graduate School of Advanced Sciences of Matter, Hiroshima Univ.
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Murakami H.
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Higashi S.
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Murakami H
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Higashi S.
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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IKEDA M.
Department of Electrical Engineering, Hiroshima University
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MIYAZAKI S.
Department of Electrical Engineering, Hiroshima University
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Hirose M.
Department Of Electrical Engineering Hiroshima University
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Makihara K.
Graduate School of Advanced Sciences of Matter, Hiroshima University
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KOHNO A.
Department of Applied Physics, Fukuoka University
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HIROSE M.
Department of Electrical Engineering, Hiroshima University
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Makihara K.
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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MURAKAMI H.
Department of Physics, Rikkyo University
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Murakami H.
Department Of Physics Rikkyo University
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Mahboob S.
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Kuroda A.
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Mahboob S.
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Katayama K.
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Hata H.
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Kaku H.
Graduate School of Advanced Sciences of Matter, Hiroshima University
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NAGAI T.
Graduate School of Advanced Sciences of Matter, Hiroshima University
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NISHIYAMA H.
Department of Electrical Engineering, Hiroshima University
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Katayama K.
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Kaku H.
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Hata H.
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Nishiyama H.
Department Of Electrical Engineering Hiroshima University
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Nechaev D.
Shirshov Institute Of Oceanology
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FUKUDA M.
Department of Physics, Osaka Univ.
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MATSUMOTO R.
Graduate School of Advanced Sciences of Matter, Hiroshima University
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SHIMANOE K.
Graduate School of Advanced Sciences of Matter, Hiroshima University
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OKUYAMA K.
Graduate School of Advanced Sciences of Matter, Hiroshima University
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SHIMIZU Y.
Graduate School of Advanced Sciences of Matter, Hiroshima University
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YOSHIDA E.
Department of Electrical Engineering, Hiroshima University
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HIROSE M.
National Institute of Advanced Industrial Science and Technology (AIST) Advanced Semiconductor Resea
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YAREMCHUK M.
Shirshov Institute of Oceanology
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DING S.
CREST, Japan Science and Technology Corporation (JST)
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Shimanoe K.
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Okuyama K.
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Ding S.
Crest Japan Science And Technology Corporation (jst)
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Nechaev D.A.
Shirshov Institute of Oceanology
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Yaremchuk M.I.
Shirshov Institute of Oceanology
著作論文
- Electrical Detection of Silicon Binding Protein-Protein A Using a p-MOSFET Sensor
- Electrical Detection of Silicon Binding Protein-Protein A Using a p-MOSFET Sensor
- Electrical detection of Si-tagged Proteins on HF-last Si(100) and Thermally grown SiO_2 surfaces(Session5B: Emerging Devices III)
- Electrical detection of Si-tagged Proteins on HF-last Si(100) and Thermally grown SiO_2 surfaces(Session5B: Emerging Devices III)
- Characterization of Multistep Electron Charging and Discharging of Silicon-Quantum-Dots Floating Gate by Applying Pulsed Gate Biases
- Self-Assembling Formation of Ni Nanodots on SiO_2 Induced by Remote H_2-plasma Treatment and Their Electrical Charging Characteristics
- Electroluminescence from Multiple-Stacked Structures of Impurity Doped Si Quantum Dots
- Characterization of MultiStep Electron Charging to Silicon-Quantum-Dot Floating Gate by Applying Pulsed Gate Biases
- Photo-Induced Electron Charging to Silicon-Quantum-Dot Floating Gate in Metal-Oxide-Semiconductor Memories
- Charge Injection Characteristics of a Si Quantum Dot Floationg Gate in MOS Structures
- Memory Operation and Electron Charging Characteristics of Silicon Quantum-Dot Floating-Gate MOSFETs
- Memory Operation and Electron Charging Characteristics of Silicon Quantum-Dot Floating-Gate MOSFETs
- Transient Characteristics of Electron Charging in Si-Quantum-Dot Floating Gate MOS Memories
- Vertical Projection of Surface Velocity Data Using the Variational Assimilation Method with Quasigeostrophic Dynamical Constraints
- Single Electron Charging to a Si Quantum Dot Floating Gate in MOS Structures
- Quantum Confinement Effect in Self-Assembled, Nanometer Silicon Dots
- Electron Charging to Silicon Quantum Dots as a Floating Gate in MOS Capacitors
- Memory Operation and Electron Charging Characteristics of Silicon Quantum-Dot Floating-Gate MOSFETs (2001 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices(AWAD 2001))