Inumiya Seiji | Semiconductor Company Toshiba Corporation
スポンサーリンク
概要
関連著者
-
Inumiya Seiji
Semiconductor Company Toshiba Corporation
-
Nara Yasuo
Semiconductor Leading Edge Technologies Inc.
-
INUMIYA Seiji
Semiconductor Leading Edge Technologies, Inc.
-
Miyazaki Seiichi
Hiroshima Univ.
-
NARA Yasuo
Semiconductor Leading Edge Technologies, Inc.
-
Inumiya Seiji
Semiconductor Leading Edge Technologies Inc. (selete)
-
Nara Yasuo
Semiconductor Leading Edge Technologies Inc. (selete)
-
Matsuki Takeo
Semiconductor Leading Edge Technologies Inc. (selete)
-
Miyazaki Seiichi
Graduate School Of Advanced Sciences And Matters Hiroshima University
-
MIYAZAKI Seiichi
Hiroshima University
-
Miyazaki Seiichi
Graduate School Of Advanced Sciences Of Matter Hiroshima University
-
YAMADA Keisaku
Waseda Univ.
-
Miyazaki Seiichi
Graduate School Of Engineering Nagoya University
-
Aoyama Takayuki
Semiconductor Leading Edge Technologies Inc.
-
Aoyama Takayuki
Semiconductor Leading Edge Technologies (Selete), Inc., Tsukuba, Ibaraki 305-8569, Japan
-
AOYAMA Takayuki
Semiconductor Leading Edge Technologies, Inc. (Selete)
-
Ohji Yuzuru
Semiconductor & Integrated Circuits Division Hitachi Ltd.
-
Yamada Keisaku
Nanotechnology Research Laboratories Waseda University
-
Yamada Keisaku
Univ. Of Tsukuba
-
Miura Takayoshi
Semiconductor Leading Edge Technologies Inc. (selete)
-
Sato Motoyuki
Semiconductor Leading Edge Technologies Inc. (selete)
-
Shirai Kiyoshi
Semiconductor Leading Edge Technologies Inc. (selete)
-
Aoyama Takayuki
Semiconductor Leading Edge Technologies Inc. (selete)
-
Miyazaki Seiichi
Graduate School of Advanced Science and Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
-
Miyazaki Seiichi
Graduate School of Advanced Sciences of Matter, Hiroshima University
-
MURAKAMI Hideki
Graduate School of Advanced Sciences of Matter, Hiroshima University
-
HIGASHI Seiichiro
Graduate School of Advanced Sciences of Matter, Hiroshima University
-
Shiraishi K
Institute Of Physics University Of Tsukuba
-
Murakami Hideki
Graduate School Of Advanced Sciences Of Matter Hiroshima University
-
PEI Yanli
Graduate School of Advanced Sciences and Matter, Hiroshima University
-
Pei Yanli
Graduate School Of Advanced Sciences And Matter Hiroshima University
-
FUKUSHIMA Noburu
Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation
-
Eimori Takahisa
Semiconductor Leading Edge Technologies Inc.
-
YAMAGUCHI Takeshi
Advanced LSI Technology Laboratory, Toshiba Corporation
-
SATO Motoyuki
Semiconductor Leading Edge Technologies, Inc. (Selete)
-
YAMABE Kikuo
Univ. of Tsukuba
-
SHIRAISHI Kenji
Univ. of Tsukuba
-
TAMURA Chihiro
Univ. of Tsukuba
-
HASUNUMA Ryu
Univ. of Tsukuba
-
OHJI Yuzuru
Semiconductor Leading Edge Technologies, Inc. (Selete)
-
UEDONO Akira
Univ. of Tsukuba
-
OHTSUKA Shingo
Semiconductor Leading Edge Technologies, Inc. (Selete)
-
WADA Tetsunori
Semiconductor Leading Edge Technologies, Inc. (Selete)
-
MIURA Takayoshi
Semiconductor Leading Edge Technologies, Inc. (Selete)
-
SHIRAI Kiyoshi
Semiconductor Leading Edge Technologies, Inc. (Selete)
-
TORII Kazuyoshi
Hitachi, Ltd., Central Research Laboratory
-
AKASAKA Yasushi
Semiconductor Leading Edge Technologies Inc.
-
Yamamoto K
Univ. Of Tsukuba
-
YAMABE Kikuo
Graduate School of Pure and Applied Sciences, University of Tsukuba
-
Yamamoto K
Kaneka Corporation
-
Umezawa Naoto
Advanced Electronic Materials Center National Institute For Materials Science
-
Torii Kazuyoshi
Semiconductor Leading Edge Technologies Inc.
-
Torii Kazuyoshi
Hitachi Ltd. Central Research Laboratory
-
Chikyow Toyohiro
Advanced Electronic Materials Center National Institute For Materials Science (nims)
-
Ohji Yuzuru
Semiconductor Leading Edge Technol. Inc. (selete) Ibaraki Jpn
-
Hasunuma Ryu
Institute Of Applied Physics University Of Tsukuba
-
Yamabe Kikuo
Institute Of Applied Physics University Of Tsukuba
-
Ohno Takahisa
Computational Materials Science Center National Institute For Materials Science
-
Ohtsuka Shingo
Semiconductor Leading Edge Technologies Inc. (selete)
-
Wada Tetsunori
Semiconductor Leading Edge Technologies Inc. (selete)
-
Hirano Izumi
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
-
SEKINE Katsuyuki
Semiconductor Company, Toshiba Corporation
-
TAKAYANAGI Mariko
Semiconductor Company, Toshiba Corporation
-
EGUCHI Kazuhiro
Semiconductor Company, Toshiba Corporation
-
Yamada Keisaku
Graduate School Of Pure And Applied Sciences University Of Tsukuba
-
Murakami Hideki
Department Of Semiconductor Electronics And Integration Science Graduate School Of Advanced Sciences
-
Yamamoto K
Photonics Research Institute National Institute Of Advanced Industrial Science And Technology (aist)
-
Eguchi Kazuhiro
Semiconductor Company Toshiba Corporation
-
Yamaguchi Takeshi
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
-
Murakami Hideki
Graduate School Of Advanced Sciences And Matters Hiroshima University
-
Higashi Seiichiro
Department Of Semiconductor Electronics And Integration Science Graduate School Of Advanced Sciences
-
Sekine Katsuyuki
Semiconductor Company Toshiba Corporation
-
Fukushima Noburu
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
-
Shiraishi Kenji
Graduate School Of Applied Physics Univ Of Tsukuba
-
Takayanagi Mariko
Advanced Cmos Technology Dept. Center For Semiconductor Research & Development Semiconductor Com
-
Takayanagi Mariko
Center For Semiconductor Research & Development Toshiba Corporation Semiconductor Company
-
Higashi Seiichiro
Graduate School Of Advanced Sciences Of Matter Hiroshima University
-
Takayanagi Mariko
Semiconductor Company Toshiba Corporation
-
Inumiya Seiji
Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
-
Inumiya Seiji
Semiconductor Leading Edge Technology Inc., Tsukuba, Ibaraki 305-8569, Japan
-
Inumiya Seiji
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
-
Uedono Akira
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan
-
Hasunuma Ryu
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan
-
Momida Hiroyoshi
Computational Materials Science Center, National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan
-
Ohmori Kenji
Advanced Electronic Materials Center, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
-
Hasunuma Ryu
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
-
Hasunuma Ryu
Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
-
Hasunuma Ryu
University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-0821, Japan
-
Uedono Akira
Graduate School of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
-
Tamura Chihiro
University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8572, Japan
-
Yamabe Kikuo
University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8572, Japan
-
Shiraishi Kenji
University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8572, Japan
-
Tamura Chihiro
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
-
Yamabe Kikuo
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
-
Yamabe Kikuo
Graduate School of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
-
Yamabe Kikuo
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan
-
Yamada Keisaku
Waseda University, 513 Waseda Tsurumakicho, Shinjuku, Tokyo 162-0041, Japan
-
Yamada Keisaku
Nanotechnology Research Laboratories, Waseda University, Tokyo 169-0041, Japan
-
Naito Tatsuya
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
-
Yamabe Kikuo
University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-0821, Japan
-
Chikyow Toyohiro
Advanced Electric Materials Center, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
-
Akasaka Yasushi
Semiconductor Leading Edge Technology Inc., Tsukuba, Ibaraki 305-8569, Japan
-
Mise Nobuyuki
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
-
Miura Takayoshi
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
-
Shirai Kiyoshi
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
-
Torii Kazuyoshi
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
-
Hasunuma Ryu
Graduate School of Pure and Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
-
Higashi Seiichiro
Graduate School of Advanced Science of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
-
Yamabe Kikuo
Graduate School of Pure and Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
-
Miyazaki Seiichi
Hiroshima University, 1-3-1 Kagamiyama, Higashihiroshima, Hiroshima 739-8530, Japan
著作論文
- Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal-Gate Capacitors(Ultra-Thin Gate Insulators,Fundamentals and Applications of Advanced Semiconductor Devices)
- Comprehensive Understanding of PBTI and NBTI reliability of High-k / Metal Gate Stacks with EOT Scaling to sub-1nm
- Mechanism of Threshold Voltage Reduction and Hole Mobility Enhancement in pMOSFETs Employing Sub-1nm EOT HfSiON by Use of Substrate Fluorine Ion Implantation
- Extendibility of High Mobility HfSiON Gate Dielectrics
- Universal thermal activation process and current induced degradation on dielectric breakdown in HfSiO(N)
- Guiding Principle of Energy Level Controllability of Silicon Dangling Bonds in HfSiON
- Comprehensive Analysis of Positive and Negative Bias Temperature Instabilities in High-$k$/Metal Gate Stack Metal–Oxide–Silicon Field Effect Transistors with Equivalent Oxide Thickness Scaling to Sub-1 nm
- Homogeneity Improvements in the Dielectric Characteristics of HfSiON Films by Nitridation
- Fabrication of High-Mobility Nitrided Hafnium Silicate Gate Dielectrics with Sub-1-nm Equivalent Oxide Thickness Using Plasma Nitridation and High-Temperature Postnitridation Annealing
- Impact of Gate Metal-Induced Stress on Performance Modulation in Gate-Last Metal–Oxide–Semiconductor Field-Effect Transistors