Miura Takayoshi | Semiconductor Leading Edge Technologies Inc. (selete)
スポンサーリンク
概要
関連著者
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Matsuki Takeo
Semiconductor Leading Edge Technologies Inc. (selete)
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Nara Yasuo
Semiconductor Leading Edge Technologies Inc.
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Miura Takayoshi
Semiconductor Leading Edge Technologies Inc. (selete)
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Inumiya Seiji
Semiconductor Company Toshiba Corporation
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Shirai Kiyoshi
Semiconductor Leading Edge Technologies Inc. (selete)
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Watanabe Toshinari
Semiconductor Leading Edge Technol. Inc. Ibaraki Jpn
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INUMIYA Seiji
Semiconductor Leading Edge Technologies, Inc.
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NARA Yasuo
Semiconductor Leading Edge Technologies, Inc.
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Inumiya Seiji
Semiconductor Leading Edge Technologies Inc. (selete)
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Eimori Takahisa
Semiconductor Leading Edge Technologies Inc.
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Nara Yasuo
Semiconductor Leading Edge Technologies Inc. (selete)
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MIURA Takayoshi
Semiconductor Leading Edge Technologies, Inc. (Selete)
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SHIRAI Kiyoshi
Semiconductor Leading Edge Technologies, Inc. (Selete)
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TORII Kazuyoshi
Hitachi, Ltd., Central Research Laboratory
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Torii Kazuyoshi
Semiconductor Leading Edge Technologies Inc.
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Torii Kazuyoshi
Hitachi Ltd. Central Research Laboratory
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Ohji Yuzuru
Semiconductor & Integrated Circuits Division Hitachi Ltd.
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Uedono Akira
Graduate School of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Mise Nobuyuki
Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan
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Yamada Keisaku
Nano Technology Research Laboratory, Waseda University, Shinjuku, Tokyo 16-0041, Japan
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Eimori Takahisa
Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan
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Mise Nobuyuki
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Ohji Yuzuru
Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan
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Miura Takayoshi
Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan
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Miura Takayoshi
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Nara Yasuo
Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan
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Shirai Kiyoshi
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Torii Kazuyoshi
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Watanabe Toshinari
Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan
著作論文
- Extendibility of High Mobility HfSiON Gate Dielectrics
- Impact of High Temperature Annealing on Traps in Physical-Vapor-Deposited-TiN/SiO2/Si Analyzed by Positron Annihilation
- Fabrication of High-Mobility Nitrided Hafnium Silicate Gate Dielectrics with Sub-1-nm Equivalent Oxide Thickness Using Plasma Nitridation and High-Temperature Postnitridation Annealing