Shirai Kiyoshi | Semiconductor Leading Edge Technologies Inc. (selete)
スポンサーリンク
概要
関連著者
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Nara Yasuo
Semiconductor Leading Edge Technologies Inc.
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Shirai Kiyoshi
Semiconductor Leading Edge Technologies Inc. (selete)
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Inumiya Seiji
Semiconductor Company Toshiba Corporation
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Matsuki Takeo
Semiconductor Leading Edge Technologies Inc. (selete)
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Miura Takayoshi
Semiconductor Leading Edge Technologies Inc. (selete)
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INUMIYA Seiji
Semiconductor Leading Edge Technologies, Inc.
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NARA Yasuo
Semiconductor Leading Edge Technologies, Inc.
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Inumiya Seiji
Semiconductor Leading Edge Technologies Inc. (selete)
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Eimori Takahisa
Semiconductor Leading Edge Technologies Inc.
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Nara Yasuo
Semiconductor Leading Edge Technologies Inc. (selete)
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MIURA Takayoshi
Semiconductor Leading Edge Technologies, Inc. (Selete)
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SHIRAI Kiyoshi
Semiconductor Leading Edge Technologies, Inc. (Selete)
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TORII Kazuyoshi
Hitachi, Ltd., Central Research Laboratory
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Horii Sadayoshi
Hitachi Kokusai Electric Inc.
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Torii Kazuyoshi
Semiconductor Leading Edge Technologies Inc.
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Torii Kazuyoshi
Hitachi Ltd. Central Research Laboratory
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Ohji Yuzuru
Semiconductor & Integrated Circuits Division Hitachi Ltd.
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Yamabe Kikuo
Institute Of Applied Physics University Of Tsukuba
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Sano Nobuyuki
Institute Of Applied Physics The University Of Tsukuba
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Ootsuka Fumio
Semiconductor Leading Edge Technologies (selete) Aist
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Nakata Hiroyuki
Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Eimori Takahisa
Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Katakami Akira
Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Shimura Kazuhiro
Hitachi Kukusai Electric Inc., 2-1 Yasuuchi, Yatsuo-machi, Toyama 939-2393, Japan
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Miura Takayoshi
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Shirai Kiyoshi
Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Shirai Kiyoshi
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Ootsuka Fumio
Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Torii Kazuyoshi
Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
著作論文
- Extendibility of High Mobility HfSiON Gate Dielectrics
- Hole Mobility Enhancement Caused by Gate-Induced Vertical Strain in Gate-First Full-Metal High-$k$ P-Channel Field Effect Transistors Using Ion-Beam W
- Fabrication of High-Mobility Nitrided Hafnium Silicate Gate Dielectrics with Sub-1-nm Equivalent Oxide Thickness Using Plasma Nitridation and High-Temperature Postnitridation Annealing