Katakami Akira | Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

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概要

• Katakami Akiraの詳細を見る
• 同名の論文著者
• Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japanの論文著者

関連著者

• Eimori Takahisa

  Semiconductor Leading Edge Technologies Inc.

• Horii Sadayoshi

  Hitachi Kokusai Electric Inc.

• Ohji Yuzuru

  Semiconductor & Integrated Circuits Division Hitachi Ltd.

• Yamabe Kikuo

  Institute Of Applied Physics University Of Tsukuba

• Sano Nobuyuki

  Institute Of Applied Physics The University Of Tsukuba

• Ootsuka Fumio

  Semiconductor Leading Edge Technologies (selete) Aist

• Nara Yasuo

  Semiconductor Leading Edge Technologies Inc.

• Shirai Kiyoshi

  Semiconductor Leading Edge Technologies Inc. (selete)

• Nakata Hiroyuki

  Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

• Eimori Takahisa

  Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

• Katakami Akira

  Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

• Shimura Kazuhiro

  Hitachi Kukusai Electric Inc., 2-1 Yasuuchi, Yatsuo-machi, Toyama 939-2393, Japan

• Shirai Kiyoshi

  Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

• Ootsuka Fumio

  Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

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著作論文

• Hole Mobility Enhancement Caused by Gate-Induced Vertical Strain in Gate-First Full-Metal High-$k$ P-Channel Field Effect Transistors Using Ion-Beam W

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