Impact of High Temperature Annealing on Traps in Physical-Vapor-Deposited-TiN/SiO2/Si Analyzed by Positron Annihilation

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概要

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• The behavior of traps in physical-vapor-depostited-TiN/SiO2/Si, which had been created in annealing process, was investigated by positron annihilation spectroscopy and X-ray photoelectron spectroscopy. The traps were found to be located at both the TiN/SiO2 and SiO2/Si interfaces, and in the SiO2-bulk. The high-temperature annealing decreased the concentration of the traps in bulk SiO2 and at SiO2/Si interface. Backside X-ray photoelectron spectroscopy (XPS) analysis of TiN/SiO2 suggested the formation of titanium oxynitride (TiON) at the TiN/SiO2 interface, and the amount of TiON formation was reduced by high-temperature annealing. The number of traps at the TiN/SiO2 interface increased with high-temperature annealing, in the case of the increased TiN deposition temperature of 300 °C.

• Japan Society of Applied Physicsの論文
• 2007-12-25

著者

• Watanabe Toshinari

  Semiconductor Leading Edge Technol. Inc. Ibaraki Jpn

• Eimori Takahisa

  Semiconductor Leading Edge Technologies Inc.

• Matsuki Takeo

  Semiconductor Leading Edge Technologies Inc. (selete)

• Ohji Yuzuru

  Semiconductor & Integrated Circuits Division Hitachi Ltd.

• Nara Yasuo

  Semiconductor Leading Edge Technologies Inc.

• Miura Takayoshi

  Semiconductor Leading Edge Technologies Inc. (selete)

• Uedono Akira

  Graduate School of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

• Mise Nobuyuki

  Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan

• Yamada Keisaku

  Nano Technology Research Laboratory, Waseda University, Shinjuku, Tokyo 16-0041, Japan

• Eimori Takahisa

  Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan

• Mise Nobuyuki

  Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

• Ohji Yuzuru

  Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan

• Miura Takayoshi

  Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan

• Nara Yasuo

  Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan

• Watanabe Toshinari

  Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan

関連論文

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