Impact of Gate Metal-Induced Stress on Performance Modulation in Gate-Last Metal–Oxide–Semiconductor Field-Effect Transistors

スポンサーリンク

概要

• 論文の詳細を見る

• The effect of gate metal film stress on the performance of gate-last metal–oxide–semiconductor field-effect transistors (MOSFETs) with a W/TiN/SiO2 gate stack was investigated. The channel strain induced by the electrode film was controlled by the W film stress. The W film stress was determined by the deposition method and film thickness. The compressive and tensile stresses of the electrode film enhance nFET and pFET performances, respectively. The enhancements of the performances are introduced not only by the stress of the film on the channel but also by the stress of the film on the side in the groove of the gate-last MOSEFTs. Metal electrode stress can be a further controlling factor in the performance of scaled devices.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-05-30

著者

• Inumiya Seiji

  Semiconductor Company Toshiba Corporation

• Eimori Takahisa

  Semiconductor Leading Edge Technologies Inc.

• Matsuki Takeo

  Semiconductor Leading Edge Technologies Inc. (selete)

• Nara Yasuo

  Semiconductor Leading Edge Technologies Inc.

• Inumiya Seiji

  Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

• Mise Nobuyuki

  Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

関連論文

• Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal-Gate Capacitors(Ultra-Thin Gate Insulators,Fundamentals and Applications of Advanced Semiconductor Devices)
• High-resolution RBS analysis of Si-dielectrics interfaces
• Comprehensive Understanding of PBTI and NBTI reliability of High-k / Metal Gate Stacks with EOT Scaling to sub-1nm
• Hf and N Release from HfSiON in High-Temperature Annealing Induced by Oxygen Incorporation
• Mechanism of Threshold Voltage Reduction and Hole Mobility Enhancement in pMOSFETs Employing Sub-1nm EOT HfSiON by Use of Substrate Fluorine Ion Implantation
• Extendibility of High Mobility HfSiON Gate Dielectrics
• Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties
• Universal thermal activation process and current induced degradation on dielectric breakdown in HfSiO(N)
• Gate-Last MISFET Structures and Process for Characterization of High-k and Metal Gate MISFETs(Microelectronic Test Structures)
• Performance and Reliability Improvement by Optimized Nitrogen Content of TaSiNx Metal Gate in Metal/HfSiON nFETs
• Area Selective Flash Lamp Post-Deposition Annealing of High-k Film Using Si Photo Absorber for Metal Gate MISFETs with NiSi Source/Drain
• Study of a Negative Threshold Voltage Shift in Positive Bias Temperature Instability and a Positive Threshold Voltage Shift the Negative Bias Temperature Instability of Yttrium-Doped HfO2 Gate Dielectrics
• Impact of Activation Annealing Temperature on the Performance, Negative Bias Temperature Instability, and Time-to-Dielectric Breakdown Lifetime of High-$k$/Metal Gate Stack p-Type Metal–Oxide–Semiconductor Field Effect Transistors
• Improvement of Device Characteristics for TiN Gate p-Type Metal–Insulator–Semiconductor Field-Effect Transistor with Al2O3-Capped HfO2 Dielectrics by Controlling Al2O3 Diffusion Annealing Process
• Dual-Metal Gate Technology with Metal-Inserted Full Silicide Stack and Ni-Rich Full Silicide Gate Electrodes Using a Single Ni-Rich Full Silicide Phase for Scaled High-$k$ Complementary Metal–Oxide–Semiconductor Field-Effect Transistors
• Etch Profile Control of W/TiN/HfSiON and W/TaSiN/HfSiON Full-Metal Gates
• Suppression of Metamorphoses of Metal/High-$k$ Gate Stack by Low-Temperature, Cl-Free SiN Offset Spacer, and Its Impact on Scaled Metal–Oxide–Semiconductor Field-Effect Transistors
• Hole Mobility Enhancement Caused by Gate-Induced Vertical Strain in Gate-First Full-Metal High-$k$ P-Channel Field Effect Transistors Using Ion-Beam W
• Hafnium 4f Core-level Shifts Caused by Nitrogen Incorporation in Hf-based High-$k$ Gate Dielectrics
• Characterization of Metal/High-$k$ Structures Using Monoenergetic Positron Beams
• Guiding Principle of Energy Level Controllability of Silicon Dangling Bonds in HfSiON
• Cathode Electron Injection Breakdown Model and Time Dependent Dielectric Breakdown Lifetime Prediction in High-$k$/Metal Gate Stack p-Type Metal–Oxide–Silicon Field Effect Transistors
• Impact of High Temperature Annealing on Traps in Physical-Vapor-Deposited-TiN/SiO2/Si Analyzed by Positron Annihilation
• Origin of the Hole Current in n-type High-$k$/Metal Gate Stacks Field Effect Transistor in an Inversion State
• Trap-Related Carrier Transports in p-Channel Field-Effect Transistor with Polycrystalline Si/HSiON Gate Stack
• Comprehensive Analysis of Positive and Negative Bias Temperature Instabilities in High-$k$/Metal Gate Stack Metal–Oxide–Silicon Field Effect Transistors with Equivalent Oxide Thickness Scaling to Sub-1 nm
• Homogeneity Improvements in the Dielectric Characteristics of HfSiON Films by Nitridation
• Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning
• Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties
• Universal Correlation between Flatband Voltage and Electron Mobility in TiN/HfSiON Devices with MgO or La2O3 Incorporation and Stack Variation
• Performance and Reliability Improvement by Optimizing the Nitrogen Content of the TaSiNx Metal Gate in Metal/HfSiON n-Type Field-Effect Transistors
• Impact on Performance, Positive Bias Temperature Instability, and Time-Dependent Dielectric Dreakdown of n-Type Field Effect Transistors Incorporating Mg into HfSiON Gate Dielectrics
• Thermally Unstable Ruthenium Oxide Gate Electrodes in Metal/High-$k$ Gate Stacks
• Fabrication of High-Mobility Nitrided Hafnium Silicate Gate Dielectrics with Sub-1-nm Equivalent Oxide Thickness Using Plasma Nitridation and High-Temperature Postnitridation Annealing
• Impact of Gate Metal-Induced Stress on Performance Modulation in Gate-Last Metal–Oxide–Semiconductor Field-Effect Transistors

もっと見る 閉じる

スポンサーリンク