Performance and Reliability Improvement by Optimizing the Nitrogen Content of the TaSiNx Metal Gate in Metal/HfSiON n-Type Field-Effect Transistors

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概要

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• We have investigated the impacts of the nitrogen content in a TaSiNx metal gate on the performance of metal/HfSiON n-type field-effect transistors (FETs). To obtain a low threshold voltage and low electrode resistance, low nitrogen concentration in TaSiNx is preferable. However, the use of a TaSi gate ($[\text{N}] = 0$%) causes the degradation of HfSiON dielectric characteristics such as an increase in leakage current under gate negative bias, positive-bias temperature instability lifetime degradation, time-dependent dielectric breakdown lifetime degradation, and reduction of the electron mobility. Then, a low-nitrogen-concentration TaSiN ($[\text{N}] = 20$%) gate shows the highest electron mobility, excellent reliability characteristics, and low threshold voltage.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-04-25

著者

• Eimori Takahisa

  Semiconductor Leading Edge Technologies Inc.

• Ohji Yuzuru

  Semiconductor & Integrated Circuits Division Hitachi Ltd.

• Nara Yasuo

  Semiconductor Leading Edge Technologies Inc.

• Sato Motoyuki

  Semiconductor Leading Edge Technologies Inc. (selete)

• Onizawa Takashi

  Semiconductor Leading Edge Technologies Inc.

• Aoyama Takayuki

  Semiconductor Leading Edge Technologies Inc.

• Eimori Takahisa

  Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

• Ohji Yuzuru

  Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

• Aoyama Takayuki

  Semiconductor Leading Edge Technologies (Selete), Inc., Tsukuba, Ibaraki 305-8569, Japan

• Onizawa Takashi

  Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

関連論文

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• Hf and N Release from HfSiON in High-Temperature Annealing Induced by Oxygen Incorporation
• Mechanism of Threshold Voltage Reduction and Hole Mobility Enhancement in pMOSFETs Employing Sub-1nm EOT HfSiON by Use of Substrate Fluorine Ion Implantation
• Extendibility of High Mobility HfSiON Gate Dielectrics
• Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties
• Properties of Ruthenium Films Prepared by Liquid Source Metalorganic Chemical Vapor Deposition Using Ru(EtCp)_2 with Tetrahydrofuran Solvent
• Performance and Reliability Improvement by Optimized Nitrogen Content of TaSiNx Metal Gate in Metal/HfSiON nFETs
• Area Selective Flash Lamp Post-Deposition Annealing of High-k Film Using Si Photo Absorber for Metal Gate MISFETs with NiSi Source/Drain
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• Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties
• Universal Correlation between Flatband Voltage and Electron Mobility in TiN/HfSiON Devices with MgO or La2O3 Incorporation and Stack Variation
• Performance and Reliability Improvement by Optimizing the Nitrogen Content of the TaSiNx Metal Gate in Metal/HfSiON n-Type Field-Effect Transistors
• Impact on Performance, Positive Bias Temperature Instability, and Time-Dependent Dielectric Dreakdown of n-Type Field Effect Transistors Incorporating Mg into HfSiON Gate Dielectrics
• Thermally Unstable Ruthenium Oxide Gate Electrodes in Metal/High-$k$ Gate Stacks
• Fabrication of High-Mobility Nitrided Hafnium Silicate Gate Dielectrics with Sub-1-nm Equivalent Oxide Thickness Using Plasma Nitridation and High-Temperature Postnitridation Annealing
• Impact of Gate Metal-Induced Stress on Performance Modulation in Gate-Last Metal–Oxide–Semiconductor Field-Effect Transistors

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