Impact on Performance, Positive Bias Temperature Instability, and Time-Dependent Dielectric Dreakdown of n-Type Field Effect Transistors Incorporating Mg into HfSiON Gate Dielectrics

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概要

• 論文の詳細を見る

• We have investigated the effect on the device performance and reliability of incorporating Mg into the HfSiON gate dielectrics. Mg incorporation is effective for reducing the threshold voltage and gate leakage current in n-type metal–oxide–semiconductor field effect transistor. On the other hand, it may introduce interface states and degrade the mobility if the Mg atoms come close to the interface between the Si substrate and the gate oxide. Nonetheless, Mg incorporation has great potential for improving reliability, including positive bias temperature instability (PBTI) and time-dependent dielectric breakdown (TDDB). Its reliability improvement is mainly caused by gate leakage current reduction and trap density suppression as an result of Mg incorporation.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2009-05-25

著者

• Ohji Yuzuru

  Semiconductor & Integrated Circuits Division Hitachi Ltd.

• Nara Yasuo

  Semiconductor Leading Edge Technologies Inc.

• Sato Motoyuki

  Semiconductor Leading Edge Technologies Inc. (selete)

• Aoyama Takayuki

  Semiconductor Leading Edge Technologies Inc.

• Nabatame Toshihide

  Semiconductor Leading Edge Technologies Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

• Ohji Yuzuru

  Semiconductor Leading Edge Technologies Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

• Aoyama Takayuki

  Semiconductor Leading Edge Technologies Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

• Aoyama Takayuki

  Semiconductor Leading Edge Technologies (Selete), Inc., Tsukuba, Ibaraki 305-8569, Japan

• Sato Motoyuki

  Semiconductor Leading Edge Technologies Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

関連論文

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• Hf and N Release from HfSiON in High-Temperature Annealing Induced by Oxygen Incorporation
• Mechanism of Threshold Voltage Reduction and Hole Mobility Enhancement in pMOSFETs Employing Sub-1nm EOT HfSiON by Use of Substrate Fluorine Ion Implantation
• Extendibility of High Mobility HfSiON Gate Dielectrics
• Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties
• Properties of Ruthenium Films Prepared by Liquid Source Metalorganic Chemical Vapor Deposition Using Ru(EtCp)_2 with Tetrahydrofuran Solvent
• Performance and Reliability Improvement by Optimized Nitrogen Content of TaSiNx Metal Gate in Metal/HfSiON nFETs
• Area Selective Flash Lamp Post-Deposition Annealing of High-k Film Using Si Photo Absorber for Metal Gate MISFETs with NiSi Source/Drain
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• Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties
• Universal Correlation between Flatband Voltage and Electron Mobility in TiN/HfSiON Devices with MgO or La2O3 Incorporation and Stack Variation
• Performance and Reliability Improvement by Optimizing the Nitrogen Content of the TaSiNx Metal Gate in Metal/HfSiON n-Type Field-Effect Transistors
• Impact on Performance, Positive Bias Temperature Instability, and Time-Dependent Dielectric Dreakdown of n-Type Field Effect Transistors Incorporating Mg into HfSiON Gate Dielectrics
• Thermally Unstable Ruthenium Oxide Gate Electrodes in Metal/High-$k$ Gate Stacks
• Fabrication of High-Mobility Nitrided Hafnium Silicate Gate Dielectrics with Sub-1-nm Equivalent Oxide Thickness Using Plasma Nitridation and High-Temperature Postnitridation Annealing
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