Vestiges of Multiple Progressive Dielectric Breakdown on HfSiON Surfaces
スポンサーリンク
概要
- 論文の詳細を見る
We have developed a new technique with conductive atomic force microscopy (CAFM) to define the position of dielectric breakdown spots in HfSiON dielectrics. It was demonstrated that, after the removal of TiN gate electrodes, dielectric breakdown spots in HfSiON were detected as protrusions, which were observed as leakage spots by CAFM. It was also shown that there is good correlation between the number of dielectric breakdown spots estimated by time-dependent leakage current analysis and the number of protrusions obtained by CAFM analysis. Furthermore, from the etching characteristics of dielectric breakdown spots obtained using diluted HF, it was revealed that the transformation of HfSiON dielectrics occured at protrusions. We concluded that the local crystallization of HfSiON occured at the dielectric breakdown spots.
- 2009-05-25
著者
-
Sato Motoyuki
Semiconductor Leading Edge Technologies Inc. (selete)
-
Hasunuma Ryu
Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
-
Yamabe Kikuo
Graduate School of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
-
Hayashi Tomohiro
Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
-
Tamura Chihiro
Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
-
Hasunuma Ryu
Graduate School of Pure and Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
-
Yamabe Kikuo
Graduate School of Pure and Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
関連論文
- Comprehensive Understanding of PBTI and NBTI reliability of High-k / Metal Gate Stacks with EOT Scaling to sub-1nm
- Performance and Reliability Improvement by Optimized Nitrogen Content of TaSiNx Metal Gate in Metal/HfSiON nFETs
- Study of a Negative Threshold Voltage Shift in Positive Bias Temperature Instability and a Positive Threshold Voltage Shift the Negative Bias Temperature Instability of Yttrium-Doped HfO2 Gate Dielectrics
- Impact of Activation Annealing Temperature on the Performance, Negative Bias Temperature Instability, and Time-to-Dielectric Breakdown Lifetime of High-$k$/Metal Gate Stack p-Type Metal–Oxide–Semiconductor Field Effect Transistors
- Vestiges of Multiple Progressive Dielectric Breakdown on HfSiON Surfaces
- Characterization of Metal/High-$k$ Structures Using Monoenergetic Positron Beams
- Guiding Principle of Energy Level Controllability of Silicon Dangling Bonds in HfSiON
- Cathode Electron Injection Breakdown Model and Time Dependent Dielectric Breakdown Lifetime Prediction in High-$k$/Metal Gate Stack p-Type Metal–Oxide–Silicon Field Effect Transistors
- Origin of the Hole Current in n-type High-$k$/Metal Gate Stacks Field Effect Transistor in an Inversion State
- Trap-Related Carrier Transports in p-Channel Field-Effect Transistor with Polycrystalline Si/HSiON Gate Stack
- Comprehensive Analysis of Positive and Negative Bias Temperature Instabilities in High-$k$/Metal Gate Stack Metal–Oxide–Silicon Field Effect Transistors with Equivalent Oxide Thickness Scaling to Sub-1 nm
- Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning
- Performance and Reliability Improvement by Optimizing the Nitrogen Content of the TaSiNx Metal Gate in Metal/HfSiON n-Type Field-Effect Transistors
- Impact on Performance, Positive Bias Temperature Instability, and Time-Dependent Dielectric Dreakdown of n-Type Field Effect Transistors Incorporating Mg into HfSiON Gate Dielectrics
- Evaluation of Kink Generation Rate and Step Flow Velocity on Si(111) during Wet Etching
- Microscopic Thickness Uniformity and Time-Dependent Dielectric Breakdown Lifetime Dispersion of Thermally Grown Ultrathin SiO
- Evaluation of Kink Generation Rate and Step Flow Velocity on Si(111) during Wet Etching (SELECTED TOPICS IN APPLIED PHYSICS : Nano Electronics and Devices : Characterization and Control of Nano Surfaces and Interfaces)