Evaluation of Kink Generation Rate and Step Flow Velocity on Si(111) during Wet Etching

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概要

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• The rate of kink generation in ultralow dissolved-oxygen water (LOW) at a \langle 11\bar{2}\rangle oriented atomic step on a Si(111) surface was experimentally determined. By controlling the step length by adding SiO<inf>2</inf>line patterns that prevent kink propagation across the patterns, it was found that step flow velocity was proportional to step length when the step was short. From the proportionality coefficient, the rate of kink generation was evaluated to be 800 cm^-1s^-1. Furthermore, the velocity of kink propagation along a step was also evaluated as 40 nm/s.

• 2013-11-25

著者

• Hasunuma Ryu

  Graduate School of Pure and Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

• Yamabe Kikuo

  Graduate School of Pure and Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

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• Evaluation of Kink Generation Rate and Step Flow Velocity on Si(111) during Wet Etching (SELECTED TOPICS IN APPLIED PHYSICS : Nano Electronics and Devices : Characterization and Control of Nano Surfaces and Interfaces)

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