Evaluation of Kink Generation Rate and Step Flow Velocity on Si(111) during Wet Etching (SELECTED TOPICS IN APPLIED PHYSICS : Nano Electronics and Devices : Characterization and Control of Nano Surfaces and Interfaces)

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概要

• 論文の詳細を見る
• The Japan Society of Applied Physicsの論文

著者

• Hasunuma Ryu

  Graduate School of Pure and Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

• Yamabe Kikuo

  Graduate School of Pure and Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

関連論文

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• Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning
• Evaluation of Kink Generation Rate and Step Flow Velocity on Si(111) during Wet Etching
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• Evaluation of Kink Generation Rate and Step Flow Velocity on Si(111) during Wet Etching (SELECTED TOPICS IN APPLIED PHYSICS : Nano Electronics and Devices : Characterization and Control of Nano Surfaces and Interfaces)

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