Microscopic Thickness Uniformity and Time-Dependent Dielectric Breakdown Lifetime Dispersion of Thermally Grown Ultrathin SiO

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概要

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• Microroughness at the surface and interface of SiO<inf>2</inf>thermally grown on an atomically flat Si terrace was investigated by atomic force microscopy. Although surface protuberances on SiO<inf>2</inf>increased in height during oxidation, their relative locations were preserved. Their positions were mostly determined in the initial stage of oxidation and their heights increased during the subsequent oxidation. It was also found that, at many positions, protuberances on the SiO<inf>2</inf>surface correspond to dimples at the interface and the dimples on the SiO<inf>2</inf>surface correspond to the protuberances on the Si/SiO<inf>2</inf>interface. With decreasing thickness, the thickness of the SiO<inf>2</inf>layer becomes two-dimensionally less uniform. The Weibull slope of the time-dependent dielectric breakdown lifetime decreased when the thermal SiO<inf>2</inf>films were grown on rougher Si substrates, which was attributed to film thickness nonuniformity. The SiO<inf>2</inf>film formed on well-defined Si wafers showed a higher microscopic thickness uniformity and higher long-term reliability.

• The Japan Society of Applied Physicsの論文
• 2013-03-25

著者

• Hasunuma Ryu

  Graduate School of Pure and Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

• Yamabe Kikuo

  Graduate School of Pure and Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

• Hayashi Yusuke

  Graduate School of Pure and Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

• Ota Masahiro

  Graduate School of Pure and Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

関連論文

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• Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning
• Evaluation of Kink Generation Rate and Step Flow Velocity on Si(111) during Wet Etching
• Microscopic Thickness Uniformity and Time-Dependent Dielectric Breakdown Lifetime Dispersion of Thermally Grown Ultrathin SiO
• Evaluation of Kink Generation Rate and Step Flow Velocity on Si(111) during Wet Etching (SELECTED TOPICS IN APPLIED PHYSICS : Nano Electronics and Devices : Characterization and Control of Nano Surfaces and Interfaces)

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