Homogeneity Improvements in the Dielectric Characteristics of HfSiON Films by Nitridation
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概要
- 論文の詳細を見る
The correlation between conduction and lifetime in HfSiON films has been characterized with reference to the inhomogeneous distribution of defects. The electrical effects that are induced by the nitrogen have been also investigated. The temperature dependence of the leakage current revealed that the inclusion of nitrogen atoms transformed the defect levels, leading to a reduction in leakage current and improved breakdown lifetime. Moreover, it was also found that nitridation leads to a suppression of the dispersion of defects. The characteristics of oxygen vacancies were demonstrated in terms of nitridation effects.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-05-30
著者
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Inumiya Seiji
Semiconductor Company Toshiba Corporation
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Hasunuma Ryu
Institute Of Applied Physics University Of Tsukuba
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Yamabe Kikuo
Institute Of Applied Physics University Of Tsukuba
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Inumiya Seiji
Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Hasunuma Ryu
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
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Tamura Chihiro
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
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Yamabe Kikuo
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
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Naito Tatsuya
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
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