Hillock-Free Heavily Boron-Doped Homoepitaxial Diamond Films on Misoriented (001) Substrates
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概要
- 論文の詳細を見る
We succeeded in the growth of a hillock-free heavily boron-doped diamond (001) film with a boron concentration of $6\times 10^{20}$ atoms/cm3, being an ideal bottom layer for diamond electronic devices. The growth of hillocks was suppressed using diamond (001) substrates with misorientation angles of around 2°. The suppression could be achieved by the enhanced lateral growth on high-$\theta$ substrates.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2007-04-15
著者
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Tokuda Norio
Nanotechnology Research Institute National Institute Of Advanced Industrial Science And Technology (
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OKUSHI Hideyo
Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology
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YAMASAKI Satoshi
Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology
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Yamabe Kikuo
Institute Of Applied Physics University Of Tsukuba
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Umezawa Hitoshi
Diamond Research Center Aist
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Okushi Hideyo
Nanotechnology Research Instiute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Tokuda Norio
Nanotechnology Research Instiute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Yamasaki Satoshi
Nanotechnology Research Instiute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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Umezawa Hitoshi
Diamond Res. Lab, National Inst. of Advanced Industrial Sci.
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