High temperature switching operation of a power diamond Schottky barrier diode
スポンサーリンク
概要
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Diamond is considered to be the most promising wide band gap semiconductor material for the fabrication of power switching devices with respect to the figure of merit. The authors have developed a high voltage and high current diamond Schottky barrier diode (SBD). This paper evaluates the static and dynamic electrical performance of the developed diamond SBD as a power switching device. The experimental results obtained under different operating conditions validate the fast switching, unipolar device characteristics, and high temperature operation capability of the developed diamond SBD.
著者
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Shikata Shinichi
Diamond Research Center Advanced Industrial Science And Technology
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Funaki Tsuyoshi
Osaka Univ.
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Umezawa Hitoshi
Diamond Res. Lab, National Inst. of Advanced Industrial Sci.
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Hirano Makiko
Osaka University, Div. of Electrical, Electronic and Information Eng. Graduate school of Engineering
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Shikata Shinichi
Diamond Res. Lab, National Inst. of Advanced Industrial Sci.
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