Thermally Stable Schottky Barrier Diode by Ru/Diamond
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概要
- 論文の詳細を見る
- 2009-01-25
著者
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Umezawa Hitoshi
National Inst. Advanced Industrial Sci. And Technol.(aist) Osaka Jpn
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Umezawa Hitoshi
Diamond Research Center Aist
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Shikata Shin-ichi
Diamond Research Center National Institute Of Advanced Industrial Science And Technology (aist)
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Shikata Shin‐ichi
National Inst. Advanced Industrial Sci. And Technol.(aist) Osaka Jpn
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Ikeda Kazuhiro
Diamond Research Center National Institute Of Advanced Industrial Science And Technology (aist)
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Ramanujam Kumaresan
Diamond Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Ts
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Ramanujam Kumaresan
Diamond Research Center National Institute Of Advanced Industrial Science And Technology (aist)
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Umezawa Hitoshi
Diamond Res. Lab, National Inst. of Advanced Industrial Sci.
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- Model of Reactive Microwave Plasma Discharge for Growth of Single-Crystal Diamond
- Thermally Stable Schottky Barrier Diode by Ru/Diamond
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- 1 \Omega On-Resistance Diamond Vertical-Schottky Barrier Diode Operated at 250 °C
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- Hillock-Free Heavily Boron-Doped Homoepitaxial Diamond Films on Misoriented (001) Substrates
- Qualitative Correspondences of Experimentally Obtained Growth Rates and Morphology of Single-Crystal Diamond with Numerical Predictions of Plasma and Gas Dynamics in Microwave Discharges for Various Substrate Holder Shapes
- Fabrication of T-Shaped Gate Diamond Metal–Insulator–Semiconductor Field-Effect Transistors
- 1Ω On-Resistance Diamond Vertical-Schottky Barrier Diode Operated at 250℃