Model of Reactive Microwave Plasma Discharge for Growth of Single-Crystal Diamond
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概要
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Distributions of species during microwave plasma discharge under elevated power density have been studied numerically. Calculations are conducted for an axisymmetric two-dimensional system, where the effects of the thermal diffusions of the constituent species and some of their chemical reactions are taken into account. While the model is simple, several qualitative characteristics of the obtained results are consistent with those obtained by experimental observations and other numerical simulations. The dependences of the distributions of the radicals on the power density and the mass-flow-rate of methane are shown. Results show that the variation of power density contributes to the increases in the amounts of both the atomic hydrogen and hydrocarbon radicals, which may be related with the simultaneous improvements of growth rate and crystal quality in experiments.
- 2011-01-25
著者
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Shikata Shin-ichi
Diamond Research Center National Institute Of Advanced Industrial Science And Technology (aist)
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Mokuno Yoshiaki
Diamond Research Center National Institute Of Advanced Industrial Science And Technology (aist)
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Chayahara Akiyoshi
Diamond Research Center National Institute Of Advanced Industrial Science And Technology (aist)
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Yamada Hideaki
Diamond Research Center National Institute Of Advanced Industrial Science And Technology (aist)
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Chayahara Akiyoshi
Diamond Research Laboratory, National Institute of Advanced Industrial Science and Technology (AIST), 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan
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Yamada Hideaki
Diamond Research Laboratory, National Institute of Advanced Industrial Science and Technology (AIST), 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan
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Mokuno Yoshiaki
Diamond Research Laboratory, National Institute of Advanced Industrial Science and Technology (AIST), 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan
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Shikata Shin-ichi
Diamond Research Laboratory, National Institute of Advanced Industrial Science and Technology (AIST), 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan
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