Field Emission from Modified P-Doped Diamond Surfaces with Different Barrier Heights

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In this study, the field emission properties of P-doped diamond with various surface treatments were measured in order to understand the effects of surface treatments on the barrier height. The emission properties were acquired for diamond with C-reconstructed, oxidized, and H-plasma treated surfaces. The voltage drop across the vacuum was estimated for each surface, using threshold voltage–anode distance ($V$–$d$) measurement. The estimated electric fields near the diamond surface were 4.95, 26.6, and 54.1 V/μm for the C-reconstructed, oxidized, and H-plasma treated surfaces, respectively. The barrier height ratio of these surfaces derived from their electric fields was $1:3.1:4.9$, which agrees with the result derived from Fowler–Nordheim (F–N) plots. Considering the electron affinities of all surfaces and the obtained results, positive electron affinities dominate the field emission properties of the C-reconstructed and oxidized surfaces. An internal barrier due to upward band bending on the H-plasma treated surface limits the field emission properties, even though it has a negative electron affinity. Our results suggest that the emission properties strongly depend on the barrier height, which is modified by surface treatment.
2008-12-25