1Ω On-Resistance Diamond Vertical-Schottky Barrier Diode Operated at 250℃
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概要
- 論文の詳細を見る
- 2013-01-25
著者
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Shikata Shin-ichi
Diamond Research Center National Institute Of Advanced Industrial Science And Technology (aist)
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Umezawa Hitoshi
Diamond Res. Lab, National Inst. of Advanced Industrial Sci.
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Kato Yukako
Diamond Research Laboratory, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
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UMEZAWA Hitoshi
Diamond Research Laboratory, National Institute of Advanced Industrial Science and Technology (AIST)
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KATO Yukako
Diamond Research Laboratory, National Institute of Advanced Industrial Science and Technology (AIST)
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SHIKATA Shin-ichi
Diamond Research Laboratory, National Institute of Advanced Industrial Science and Technology (AIST)
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- Qualitative Correspondences of Experimentally Obtained Growth Rates and Morphology of Single-Crystal Diamond with Numerical Predictions of Plasma and Gas Dynamics in Microwave Discharges for Various Substrate Holder Shapes
- 1Ω On-Resistance Diamond Vertical-Schottky Barrier Diode Operated at 250℃