1 \Omega On-Resistance Diamond Vertical-Schottky Barrier Diode Operated at 250 °C

概要

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Vertical-structured diamond Schottky barrier diodes with a thick field plate have been developed. The diamond VSBD with a 30 μm square (8.8\times 10^{-6} cm2) Schottky electrode shows specific on-resistance and blocking voltage, such as 29.3 m\Omega cm2 (3.3 k\Omega) and 842 V at room temperature, respectively, however, the lower specific on-resistance with a constant blocking voltage such as 9.4 m\Omega cm2 (1 k\Omega) and 840 V, respectively, have been realized at 250 °C. As a result, Baliga's figure of merit (BVBD2/R_{\text{on}}S) is improved from 24.1 to 75.3 MW/cm2. This value is the best in diamond diodes at present. The diamond VSBD with a 1,000 μm square (9.7\times 10^{-3} cm2) Schottky electrode shows high forward current and low on-resistance, such as more than 5 A and 10.2 m\Omega cm2 (1.04 \Omega), respectively, at 250 °C. The estimated parasitic resistance of the SBD is less than 0.04 \Omega.
2013-01-25