Anneal-Induced Degradation of Amorphous Selenium Characterized by Photoconductivity Measurements
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概要
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Photoconductivity measurements of amorphous selenium (a-Se) and arsenic selenide (a-As2Se3) were carried out. Samples where annealed from 333–358 K at 5 K step for 5 minutes and the photoconductivity was measured after each annealing step. It was found that the dark current increases permanently for a-Se and the photoconductivity ratio increased drastically after 338 K, but drops after further annealing. Amorphous-As2Se3 however, has no noticeable change in the dark current neither in the photoconductivity ratio. Arsenic is introduced into a-Se to prevent degradation, which causes loss of image quality, but the volume must be controlled in order to maintain high photoconductivity.
- 2005-02-10
著者
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OONUKI Kousuke
Department of High Energy Astrophysics, Institute of Space and Astronautical Science (ISAS), Japan A
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Yamada Takatoshi
Diamond Research Center Advanced Industrial Science And Technology
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Okano Ken
Department Of Electronic & Photonics System Engineering Kouchi University Of Technology
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SAITO Ichitaro
Department of Engineering, University of Cambridge
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BUTLER Tim
Department of Engineering, University of Cambridge
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RUPESINGHE Nalin
Department of Engineering, University of Cambridge
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AMARATUNGA Gehan
Department of Engineering, University of Cambridge
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MILNE William
Department of Engineering, University of Cambridge
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Aono Masami
Department Of Materials Science And Engineering National Defense Academy
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Yamada Takatoshi
Diamond Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Milne William
Department of Engineering, University of Cambridge, Trumpington Street, Cambridge CB2 1PZ, U.K.
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Oonuki Kousuke
Department of Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-0033, Japan
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Amaratunga Gehan
Department of Engineering, University of Cambridge, Trumpington Street, Cambridge CB2 1PZ, U.K.
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