Experimental study on dynamic behavior of power MOSFET based on capacitance-voltage characteristics (電子デバイス)
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概要
- 論文の詳細を見る
Dynamic behaviors of power MOSFET, classically, are related to parasitic capacitances, which are measured as inter-terminal capacitances. The aim of this paper is to model the dynamic behaviors of power MOSFET based on the physical structure of the device and extract model parameters from the measured C-V characteristics. The simulated results in switching behavior of the proposed model coincide with experimental results suitably.
- 社団法人電子情報通信学会の論文
- 2008-10-16
著者
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Hikihara Takashi
Department of Electrical Engineering, Kyoto University
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Funaki Tsuyoshi
Osaka Univ.
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Hikihara Takashi
Kyoto Univ. Kyoto Jpn
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Hikihara Takashi
Departmer Of Electrical Engineering Kyoto University:photonics And Electronics Science And Engineeri
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Phankong Nathabhat
Kyoto Univ.
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Hikihara Takashi
Kyoto Univ. Kyoto‐shi Jpn
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Hikihara Takashi
Kyoto Univ.
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