Phankong Nathabhat | Kyoto Univ.
スポンサーリンク
概要
関連著者
-
Hikihara Takashi
Department of Electrical Engineering, Kyoto University
-
Funaki Tsuyoshi
Osaka Univ.
-
Hikihara Takashi
Kyoto Univ. Kyoto Jpn
-
Hikihara Takashi
Departmer Of Electrical Engineering Kyoto University:photonics And Electronics Science And Engineeri
-
Phankong Nathabhat
Kyoto Univ.
-
Hikihara Takashi
Kyoto Univ. Kyoto‐shi Jpn
-
Hikihara Takashi
Kyoto Univ.
-
Funaki Tsuyoshi
Kyoto University, Department of Electrical Engineering
著作論文
- C-10-7 EVALUATION OF BASE REGION PARAMETERS IN IGBT BASED ON CAPACITANCE-VOLTAGE CHARACTERISTICS
- A Discussion on the High Level Excess Carrier Lifetime Effect of IGBT Model
- Experimental Study on Dynamic Behavior of Power MOSFET Based on Capacitance-Voltage Characteristics
- Experimental study on dynamic behavior of power MOSFET based on capacitance-voltage characteristics (電子デバイス)