Hasunuma Ryu | Institute Of Applied Physics University Of Tsukuba
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概要
関連著者
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Hasunuma Ryu
Institute Of Applied Physics University Of Tsukuba
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Yamabe Kikuo
Institute Of Applied Physics University Of Tsukuba
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Tokuda Norio
Institute Of Applied Physics University Of Tsukuba
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Tokuda Norio
Nanotechnology Research Institute National Institute Of Advanced Industrial Science And Technology (
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Tokuda N
Univ. Tsukuba Ibaraki Jpn
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YAMABE Kikuo
Institute of Applied Physics, University of Tsukuba
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MIKI Kazushi
Institute of Applied Physics, University of Tsukuba
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YAMASAKI Satoshi
Institute of Applied Physics, University of Tsukuba
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HASUNUMA Ryu
Institute of Applied Physics, University of Tsukuba
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Tokuda Norio
Diamond Research Center National Institute Of Advanced Industrial Science And Technology (aist)
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Ryu Hasunuma
Institute Of Applied Physics University Of Tsukuba
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Tokuda Norio
Institute Of Science And Engineering Kanazawa University
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Tokuda N
Institute Of Science And Engineering Kanazawa University
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Nishizawa Masayasu
Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industrial Science And
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Sometani Mitsuru
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Tamura Chihiro
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
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Yamabe Kikuo
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
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Yamanaka Sadanori
Nanotechnology Research Institute National Institute Of Advanced Industrial Science And Technology (
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YAMANAKA Shoji
Faculty of Engineering,Hiroshima University
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Inumiya Seiji
Semiconductor Company Toshiba Corporation
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TOKUDA Norio
Diamond Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
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NISHIZAWA Masayasu
Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and
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OKAMOTO Junichi
Institute of Applied Physics, University of Tsukuba
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MIKI Kazushi
Research Center for Advanced Carbon Materials and Nanotechnology Research Institute National Institu
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MIKI Kazushi
Nanotechnology Research Institute-AIST
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MIKI Kazushi
Electrotechnical Laboratory (ETL)
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Torii Kazuyoshi
Semiconductor Leading Edge Technologies Inc.
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HIGUCHI Keiichi
Institute of Applied Physics, University of Tsukuba
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Miki K
Electrotechnical Laboratory (etl)
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Miki Kazushi
National Institute Of Materials Science (nims)
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Miki Kazushi
Aist
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Miki Kazushi
Nanoarchitecture Group Organic Nanomaterials Center National Institute For Materials Science
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Goto Masakazu
Institute Of Applied Physics University Of Tsukuba
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Okamoto Junichi
Institute Of Applied Physics University Of Tsukuba
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Inumiya Seiji
Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
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Hasunuma Ryu
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Hasunuma Ryu
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
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Uedono Akira
Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan
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Ogino Masaaki
Semiconductor Process R&D Section, Semiconductor Process R&D Department, Electron Device Laboratory, Fuji Electric Device Technology Co., Ltd., 4-15-1, Matsumoto, Nagano 390-0821, Japan
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Kuribayashi Hitoshi
Semiconductor Process R&D Section, Semiconductor Process R&D Department, Electron Device Laboratory, Fuji Electric Device Technology Co., Ltd., 4-15-1, Matsumoto, Nagano 390-0821, Japan
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Sugahara Yoshiyuki
Semiconductor Process R&D Section, Semiconductor Process R&D Department, Electron Device Laboratory, Fuji Electric Device Technology Co., Ltd., 4-15-1, Matsumoto, Nagano 390-0821, Japan
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Hayashi Tomohiro
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
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Kikuchi Yuuki
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
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Ohmori Kenji
Nanotechnology Laboratory, Waseda University, 513 Waseda Tsurumaki-cho, Shinjuku-ku, Tokyo 162-0041, Japan
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Naito Tatsuya
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
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Ogino Masaaki
Semiconductor Process R&D Section, Semiconductor Process R&D Department, Electron Device Laboratory, Fuji Electric Device Technology Co., Ltd., 4-15-1, Matsumoto, Nagano 390-0821, Japan
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Kuribayashi Hitoshi
Semiconductor Process R&D Section, Semiconductor Process R&D Department, Electron Device Laboratory, Fuji Electric Device Technology Co., Ltd., 4-15-1, Matsumoto, Nagano 390-0821, Japan
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Goto Masakazu
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Sugahara Yoshiyuki
Semiconductor Process R&D Section, Semiconductor Process R&D Department, Electron Device Laboratory, Fuji Electric Device Technology Co., Ltd., 4-15-1, Matsumoto, Nagano 390-0821, Japan
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Nishizawa Masayasu
Nanodevice Innovation Research Center, National Institute of Advanced Industrial Science and Technology
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Hasunuma Ryu
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba 305-8573, Japan
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Ogino Masaaki
Electronic Device Laboratory, Fuji Electric Co., Ltd.
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Tokuda Norio
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba 305-8573, Japan
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Kuribayashi Hitoshi
Matsumoto Factory, Electronic Devices Business Headquater, Fuji Electric Co., Ltd., Matsumoto, Nagano 390-0821, Japan
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Sugahara Yoshiyuki
Matsumoto Factory, Electronic Devices Business Headquater, Fuji Electric Co., Ltd., Matsumoto, Nagano 390-0821, Japan
著作論文
- Selective Growth of Monoatomic Cu Rows at Step Edges on Si(111) Substrates in Ultralow-Dissolved-Oxygen Water
- Nonuniformity in Ultrathin SiO_2 on Si(111) Characterized by Conductive Atomic Force Microscopy
- Variation of Chemical Vapor Deposited SiO Density Due to Generation and Shrinkage of Open Space During Thermal Annealing
- Transient Capacitance in Metal-Oxide-Semiconductor Structures with Stacked Gate Dielectrics
- Improvement of Dielectric Properties on Deposited SiO2 Caused by Stress Relaxation with Thermal Annealing
- Analyses of Threshold Voltage Shift on Hole Injection in HfSiOx Films
- Homogeneity Improvements in the Dielectric Characteristics of HfSiON Films by Nitridation
- Selective Growth of Monoatomic Cu Rows at Step Edges on Si(111) Substrates in Ultralow-Dissolved-Oxygen Water