Sometani Mitsuru | Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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概要
- Sometani Mitsuruの詳細を見る
- 同名の論文著者
- Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japanの論文著者
関連著者
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Hasunuma Ryu
Institute Of Applied Physics University Of Tsukuba
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Yamabe Kikuo
Institute Of Applied Physics University Of Tsukuba
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Sometani Mitsuru
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Hasunuma Ryu
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Uedono Akira
Institute of Applied Physics and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan
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Ogino Masaaki
Semiconductor Process R&D Section, Semiconductor Process R&D Department, Electron Device Laboratory, Fuji Electric Device Technology Co., Ltd., 4-15-1, Matsumoto, Nagano 390-0821, Japan
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Kuribayashi Hitoshi
Semiconductor Process R&D Section, Semiconductor Process R&D Department, Electron Device Laboratory, Fuji Electric Device Technology Co., Ltd., 4-15-1, Matsumoto, Nagano 390-0821, Japan
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Sugahara Yoshiyuki
Semiconductor Process R&D Section, Semiconductor Process R&D Department, Electron Device Laboratory, Fuji Electric Device Technology Co., Ltd., 4-15-1, Matsumoto, Nagano 390-0821, Japan
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Ogino Masaaki
Semiconductor Process R&D Section, Semiconductor Process R&D Department, Electron Device Laboratory, Fuji Electric Device Technology Co., Ltd., 4-15-1, Matsumoto, Nagano 390-0821, Japan
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Kuribayashi Hitoshi
Semiconductor Process R&D Section, Semiconductor Process R&D Department, Electron Device Laboratory, Fuji Electric Device Technology Co., Ltd., 4-15-1, Matsumoto, Nagano 390-0821, Japan
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Sugahara Yoshiyuki
Semiconductor Process R&D Section, Semiconductor Process R&D Department, Electron Device Laboratory, Fuji Electric Device Technology Co., Ltd., 4-15-1, Matsumoto, Nagano 390-0821, Japan
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Ogino Masaaki
Electronic Device Laboratory, Fuji Electric Co., Ltd.
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Kuribayashi Hitoshi
Matsumoto Factory, Electronic Devices Business Headquater, Fuji Electric Co., Ltd., Matsumoto, Nagano 390-0821, Japan
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Sugahara Yoshiyuki
Matsumoto Factory, Electronic Devices Business Headquater, Fuji Electric Co., Ltd., Matsumoto, Nagano 390-0821, Japan
著作論文
- Variation of Chemical Vapor Deposited SiO Density Due to Generation and Shrinkage of Open Space During Thermal Annealing
- Improvement of Dielectric Properties on Deposited SiO2 Caused by Stress Relaxation with Thermal Annealing