Shiraishi K | Institute Of Physics University Of Tsukuba

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著作論文

High-resolution RBS analysis of Si-dielectrics interfaces
Effect of Si/SiO_2 Interface on Silicon and Boron Diffusion in Thermally Grown SiO_2
Mechanism of Potential Profile Formation in Silicon Single-Electron Transistors Fabricated Using Pattern-Dependent Oxidation : Semiconductors
Effect of Oxidation-Induced Strain on Potential Profile in Si SETs Using Pattern-Dependent Oxidation (PADOX)
Comprehensive Understanding of PBTI and NBTI reliability of High-k / Metal Gate Stacks with EOT Scaling to sub-1nm
Effect of Nitrogen on Diffusion in Silicon Oxynitride
The Effect of Partial Pressure of Oxygen on Self-Diffusion of Si in SiO_2
Interfacial Silicon Emission in Dry Oxidation-the Effect of H and Cl
Interfacial Silicon Emission in Dry Oxidation -the Effect of H and Cl
Oxidation Simulation of Heavily Phosphorus-Doped Silicon based on the Interfacial Silicon Emission Model : Semiconductors
The Effect of Chlorine on Silicon Oxidation : Simulation based on the Interfacial Silicon Emission Model
Phenomenological Theory on Si Layer-by-Layer Oxidation with Small Interfacial Islands
Oxidation Simulation of (111) and (100) Silicon Substrates Based on the Interfacial Silicon Emission Model
Simulation of High-Pressure Oxidation of Silicon Based on the Interfacial Silicon Emission Model
Unified Simulation of Silicon Oxidation Based on the Interfacial Silicon Emission Model
Universal Theory of Si Oxidation Rate and Importance of Interfacial Si Emission
Oxygen Vacancy Induced Substantial Threshold Voltage Shifts in the Hf-based High-K MISFET with p+poly-Si Gates : A Theoretical Approach
Tunable Exchange Interaction in Quantum Dot Devices
Ferromagnetism in Semiconductor Dot Array
A Study on a Position Measurement Method for Conduit Pipelines Using Cumulating Attitude

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