TAKAHASHI Yasuo | Graduate School of Information Science and Technology, Hokkaido University

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概要

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著作論文

A Single-Electron-Transistor Logic Gate Family for Binary, Multiple-Valued and Mixed-Mode Logic(New System Paradigms for Integrated Electronics)
A Simulation Methodology for Single-Electron Multiple-Valued Logics and Its Application to a Latched Parallel Counter
Novel-Functional Single-Electron Devices Using Silicon Nanodot Array
Fabrication of double-dot single-electron transistor in silicon nanowire
Novel-Functional Single-Electron Devices Using Silicon Nanodot Array
Fabrication of double-dot single-electron transistor in silicon nanowire
Transfer and Detection of Single Electrons Using Metal-Oxide-Semiconductor Field-Effect Transistors(Emerging Devices,Fundamentals and Applications of Advanced Semiconductor Devices)
Charge-State Control of Phosphorus Donors in Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor
Multifunctional Boolean Logic Using Single-Electron Transistors(New System Paradigms for Integrated Electronics)
A Multiple-Valued Logic and Memory With Combined Single-Electron and Metal-Oxide-Semiconductor Transistors
A Merged Single-Electron Transistor and Metal-Oxide-Semiconductor Transistor Logic for Interface and Multiple-Valued Functions
Multipeak negative-differential-resistance device by combining single-electron and metal-oxide-semiconductor transistors
A Merged SET-MOSFET Logic for Interface and Multiple-Valued Functions
Voltage Gain of Si Single-Electron Transistor and Analysis of Performance of n-Metal-Oxide-Semiconductor Type Inverter with Resistive Load
Single-Electron Detection in Si-Wire Transistors at Room Temperature
Si Single-Electron Transistors with High Voltage Gain
Mechanism of Potential Profile Formation in Silicon Single-Electron Transistors Fabricated Using Pattern-Dependent Oxidation : Semiconductors
Single-Electron Transistor and Current-Switching Device Fabricated by Vertical Pattern-Dependent Oxidation
Multifunctional Device Using Nanodot Array
Multifunctional device by using a quantum dot array
In situ Conductance Measurement of a Limited Number of Nanoparticles during Transmission Electron Microscopy Observation
Sampling Jitter and Finite Aperture Time Effects in Wideband Data Acquisition Systems(Special Section on Analog Circuit Techniques and Related Topics)
Analysis of CMOS ADC Nonlinear Input Capacitance
Use of finite element method for comparison of sound field diffuseness in reverberation rooms with and without absorption materials
Effect of Arrangement of Input Gates on Logic Switching Characteristics of Nanodot Array Device

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