Horiguchi Seiji | Department Of Electrical And Electronic Engineering Akita University
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概要
- Horiguchi Seijiの詳細を見る
- 同名の論文著者
- Department Of Electrical And Electronic Engineering Akita Universityの論文著者
関連著者
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Horiguchi Seiji
Department Of Electrical And Electronic Engineering Akita University
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Ikeda Hiroya
Research Institute Of Electronics Shizuoka University
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MORARU Daniel
Research Institute of Electronics, Shizuoka University
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HORIGUCHI Seiji
Department of Electrical and Electronic Engineering, Akita University
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Tabe Michiharu
Research Institue Of Electronics Shizuoka University
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田部 道晴
静岡大学電子工学研究所
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TABE Michiharu
Research Institute of Electronics, Shizuoka University
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Moraru Daniel
Shizuoka Univ. Hamamatsu Jpn
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Tabe Michiharu
Ntt Lsi Laboratories:(present Address)research Institute Of Electronics Shizuoka University
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田部 道晴
静岡大学 電子工学研究所
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Nuryadi Ratno
Research Institute of Electronics, Shizuoka University
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NAGATA Daisuki
Research Institute of Electronics, Shizuoka University
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Nuryadi Ratno
Research Institute Of Electronics Shizuoka University
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Nuryadi Ratno
Department Of Physics Faculty Of Science Shizuoka University
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Nuryadi Ratno
Research Institue Of Electronics Shizuoka University
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Nuryadi Ratno
Shizuoka Univ. Hamamatsu Jpn
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Nagata Daisuki
Research Institute Of Electronics Shizuoka University
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KATO Hiroshi
Research Institute of Electronics, Shizuoka University
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Ishikawa Yasuhiko
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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HORIGUCHI Seishi
Optoelectronics Joint Research Laboratory
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Ono Yukinori
NTT Basic Research Laboratories
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ISHIKAWA Yasuhiko
Research Institute of Electronics, Shizuoka University
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Ono Yukinori
Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corporation
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Ono Yukinori
Ntt Basic Research Laboratories Ntt Cornoration
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石川 靖彦
Research Institute Of Electronics Shizuoka University
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Ishikawa Yasuhiko
1research Institute Of Electronics Shizuoka University
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Inokawa Hiroshi
Research Institute Of Electronics Shizuoka Univ.
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Inokawa Hiroshi
Ntt Basic Research Laboratories Ntt Corporation
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Horiguchi Seiji
Ntt Basic Research Laboratories Ntt Corporation
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TAKAHASHI Yasuo
Graduate School of Information Science and Technology, Hokkaido University
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Takahashi Y
Hokkaido Univ. Sapporo‐shi Jpn
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Inokawa H
Research Institute Of Electronics Shizuoka Univ.
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Takahashi Y
Ntt Basic Research Laboratories Ntt Cornoration
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NISHIGUCHI Katsuhiko
NTT Basic Research Laboratories, NTT Corporation
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Ishikawa Y
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Ishikawa Y
Dowa Mining Co. Ltd. Tokyo
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Ishikawa Y
Department Of Electrical And Electronics Engineering Nippon Institute Of Technology
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Takahashi Yasuo
Graduate School Of Information Science And Technology Hokkaido Univ.
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Ishikawa Y
Hokkaido Univ. Sapporo Jpn
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Takahashi Y
Graduate School Of Information Science And Technology Hokkaido Univ.
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Nishiguchi Katsuhiko
Ntt Basic Research Laboratories Ntt Corporation
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Horiguchi Seiji
Department Of Electrical And Electronic Engineering Faculty Of Engineering And Resource Science Akit
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Ikeda Hiroya
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 432-8011, Japan
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Tabe Michiharu
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 432-8011, Japan
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Moraru Daniel
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 432-8011, Japan
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Horiguchi Seiji
Department of Electrical and Electronic Engineering, Akita University, 1-1 Tegata-Gakuen-machi, Akita 010-8502, Japan
著作論文
- Tunneling current oscillations in Si/SiO_2/Si structures(結晶成長評価及びデバイス(化合物,Si,SiGe,その他の電子材料))
- Tunneling current oscillations in Si/SiO_2/Si structures(結晶成長評価及びデバイス(化合物,Si, SiGe,その他の電子材料))
- Fowler-Nordheim Current Oscillations in Si(111)/SiO_2/Twisted-Si(111) Tunneling Structures
- Tunneling current oscillations in Si/SiO_2/Si structures(結晶成長評価及びデバイス(化合物,Si, SiGe,その他の電子材料))
- Charge-State Control of Phosphorus Donors in Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor
- Fowler–Nordheim Current Oscillations in Si(111)/SiO2/Twisted-Si(111) Tunneling Structures