Nuryadi Ratno | Research Institue Of Electronics Shizuoka University
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概要
関連著者
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Tabe Michiharu
Research Institue Of Electronics Shizuoka University
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Nuryadi Ratno
Research Institue Of Electronics Shizuoka University
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Nuryadi Ratno
Research Institute of Electronics, Shizuoka University
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TABE Michiharu
Research Institute of Electronics, Shizuoka University
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Nuryadi Ratno
Department Of Physics Faculty Of Science Shizuoka University
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Nuryadi Ratno
Shizuoka Univ. Hamamatsu Jpn
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田部 道晴
静岡大学電子工学研究所
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Tabe Michiharu
Ntt Lsi Laboratories:(present Address)research Institute Of Electronics Shizuoka University
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Nuryadi Ratno
Research Institute Of Electronics Shizuoka University
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Ikeda Hiroya
Research Institute Of Electronics Shizuoka University
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田部 道晴
静岡大学 電子工学研究所
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Burhanudin Zainal
Research Institue Of Electronics Shizuoka University
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BURHANUDIN Zainal
Research Institue of Electronics, Shizuoka University
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Moraru Daniel
Shizuoka Univ. Hamamatsu Jpn
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MORARU Daniel
Research Institute of Electronics, Shizuoka University
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Ishikawa Yasuhiko
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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石川 靖彦
静岡大学電子工学研究所
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NAGATA Daisuki
Research Institute of Electronics, Shizuoka University
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HORIGUCHI Seiji
Department of Electrical and Electronic Engineering, Akita University
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ISHIKAWA Yasuhiko
Research Institute of Electronics, Shizuoka University
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Nagata Daisuki
Research Institute Of Electronics Shizuoka University
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Horiguchi Seiji
Department Of Electrical And Electronic Engineering Akita University
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Ishikawa Y
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Ishikawa Y
Dowa Mining Co. Ltd. Tokyo
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Ishikawa Y
Hokkaido Univ. Sapporo Jpn
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YOKOI Kiyohito
Research Institute of Electronics, Shizuoka University
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Ono Yukinori
NTT Basic Research Laboratories
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Inokawa Hiroshi
Research Institute of Electronics, Shizuoka University
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Tare Michiharu
Research Institue Of Electronics Shizuoka University
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Ono Yukinori
Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corporation
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Ono Yukinori
Ntt Basic Research Laboratories Ntt Cornoration
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Inokawa Hiroshi
Research Institute Of Electronics Shizuoka Univ.
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Inokawa Hiroshi
Research Institute Of Electronics Shizuoka University
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Yokoi Kiyohito
Research Institute Of Electronics Shizuoka University
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Ishikawa Y
Department Of Electrical And Electronics Engineering Nippon Institute Of Technology
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LIGOWSKI Maciej
Research Institute of Electronics, Shizuoka University
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Ichiraku Akihiro
Research Institute of Electronics, Shizuoka University
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Anwar Miftahul
Research Institute of Electronics, Shizuoka University
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Jablonski Ryszard
Division of Sensors and Measuring Systems, Faculty of Mechatronics, Warsaw University of Technology
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ブルハヌディン ザイナル
静岡大学電子工学研究所
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Ichiraku Akihiro
Research Institute Of Electronics Shizuoka University
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Ligowski Maciej
Research Institute Of Electronics Shizuoka University
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ブルハヌディン ザイナル
Research Institue Of Electronics Shizuoka University
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Moraru Daniel
Graduate School of Electronic Science and Technology, Shizuoka University
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YOKO Kiyohito
Research Institute of Electronics, Shizuoka University
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NURYAD Ratno
Research Institute of Electronics, Shizuoka University
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Tabe M
Shizuoka Univ. Hamamatsu Jpn
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石川 靖彦
Research Institute Of Electronics Shizuoka University
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Amemiya Yoshihito
Faculty Of Engineering Hokkaido University
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Tabe Michiharu
Research Institute Of Electronics Shizuoka University
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Burhanudin Zainal
Graduate School of Electronic Science and Technology, Shizuoka University
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Burhanudin Zainal
Graduate School Of Electronic Science And Technology Shizuoka University
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Amemiya Yoshihito
The Department Of Electrical Engineering Hokkaido University
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TERAO Yoichi
Research Institute of Electronics, Shizuoka University
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ASAHI Noboru
Faculty of Engineering, Hokkaido University
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Terao Yoichi
Research Institute Of Electronics Shizuoka University
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Asahi N
Faculty Of Engineering Hokkaido University
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Asahi Noboru
Faculty Of Engineering Hokkaido University
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Huryadi Ratno
Research Institute of Electronics, Shizuoka University
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Burhanudin Zainal
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan
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Fan Youjun
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan
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Nuryadi Ratno
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan
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Nuryadi Ratno
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011, Japan
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Ikeda Hiroya
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011, Japan
著作論文
- Single-electron transfer in phosphorous-doped Si nanowire FETs
- Time-controlled single-electron transfer in single-gated asymmetric multiple tunnel junction arrays
- Tunneling current oscillations in Si/SiO_2/Si structures(結晶成長評価及びデバイス(化合物,Si,SiGe,その他の電子材料))
- Tunneling current oscillations in Si/SiO_2/Si structures(結晶成長評価及びデバイス(化合物,Si, SiGe,その他の電子材料))
- Charge polarization effect on single-hole-characteristics in a two-dimensional Si multidot structure
- Tunneling current oscillations in Si/SiO_2/Si structures(結晶成長評価及びデバイス(化合物,Si, SiGe,その他の電子材料))
- Dopant ionization in silicon nanodevices investigated by Kelvin Probe Force Microscope (シリコン材料・デバイス)
- Dopant ionization in silicon nanodevices investigated by Kelvin Probe Force Microscope (電子デバイス)
- Photo-illumination effects on the Si multiple-tunnel-junction single-hole devices
- Light irradiation effect on single-hole-tunneling current of an SOI-FET(結晶成長評価及びデバイス(化合物,Si, SiGe,その他の電子材料))
- Photon irradiation effects on Si multiple-tunnel-junction field-effect transistors : Sensing the presence of a single-charge in the substrate
- Photon irradiation effects on Si multiple-tunnel-junction field-effect transistors : Sensing the presence of a single-charge in the substrate
- Photon irradiation effects on Si multiple-tunnel-junction field-effect transistors : Sensing the presence of a single-charge in the substrate
- Light irradiation effect on single-hole-tunneling current of an SOI-FET(結晶成長評価及びデバイス(化合物,Si,SiGe,その他の電子材料))
- Light irradiation effect on single-hole-tunneling current of an SOI-FET(結晶成長評価及びデバイス(化合物,Si, SiGe,その他の電子材料))
- Thermally-Induced Structural Changes of Ultrathin Silicon-on-Insulator Structure
- Simulation of Visible Light Induced Effects in a Tunnel Junction Array for Photonic Device Applications
- Photoinduced Effects on Single-Charge Tunneling in a Si Two-Dimensional Multidot Field-Effect Transistor
- Thermal Agglomeration of Ultrathin Silicon-on-Insulator Layers: Crystalline Orientation Dependence