Light irradiation effect on single-hole-tunneling current of an SOI-FET(結晶成長評価及びデバイス(化合物,Si, SiGe,その他の電子材料))

スポンサーリンク

概要

• 論文の詳細を見る

• A single-photon detector based on Si multidots single-hole-tunneling (SHT) SOI-FET has been demonstrated by our group. The detector, however, only detects photons absorb in the Si dots on the top of the SOI layer resulting in a rather low quantum efficiency (QE). Our attempt to improve the QE by introducing additional photon absorption layer using a p/p^+-Si as the SOI substrate is reported. It will be shown that the absorption of photons in the depleted p-Si layer of the substrate lead to an increase in the effective back gate bias, which in return modulated the SHT current that is flowing in the top-Si channel. The result demonstrates the functionality of the device, and thus opens up the possibility of realizing a high QE single-photon detector based on SHT SOI-FET.

• 社団法人電子情報通信学会の論文
• 2006-05-11

著者

• TABE Michiharu

  Research Institute of Electronics, Shizuoka University

• Nuryadi Ratno

  Research Institute of Electronics, Shizuoka University

• Tabe Michiharu

  Research Institue Of Electronics Shizuoka University

• Nuryadi Ratno

  Department Of Physics Faculty Of Science Shizuoka University

• Nuryadi Ratno

  Research Institue Of Electronics Shizuoka University

• Nuryadi Ratno

  Shizuoka Univ. Hamamatsu Jpn

• Tabe Michiharu

  Ntt Lsi Laboratories:(present Address)research Institute Of Electronics Shizuoka University

• BURHANUDIN Zainal

  Research Institue of Electronics, Shizuoka University

• Burhanudin Zainal

  Research Institue Of Electronics Shizuoka University

関連論文

• Observation of discrete dopant potential and its application to Si single-electron devices
• Design of dopant-induced quantum dot arrays in silicon nanostructures for single-electron transfer (シリコン材料・デバイス)
• Design of dopant-induced quantum dot arrays in silicon nanostructures for single-electron transfer (電子デバイス)
• Single-electron transfer in phosphorous-doped Si nanowire FETs
• Time-controlled single-electron transfer in single-gated asymmetric multiple tunnel junction arrays
• Tunneling current oscillations in Si/SiO_2/Si structures(結晶成長評価及びデバイス(化合物,Si,SiGe,その他の電子材料))
• Tunneling current oscillations in Si/SiO_2/Si structures(結晶成長評価及びデバイス(化合物,Si, SiGe,その他の電子材料))
• Fowler-Nordheim Current Oscillations in Si(111)/SiO_2/Twisted-Si(111) Tunneling Structures
• Current fluctuation in single-hole transport through a two-dimensional Si multidot
• Formation of Nanometer-Scale Dislocation Network Sandwiched by Silicon-on-Insulator Layers
• Charge polarization effect on single-hole-characteristics in a two-dimensional Si multidot structure
• Photoinduced Effects on Single-Charge Tunneling in a Si Two-Dimensional Multidot Field-Effect Transistor
• Ambipolar Coulomb Blockade Characteristics in a Two-Dimensional Si Multidot Device
• Artificial Dislocation Network in Silicon-on-Insulator Layer for Single-Electron Devices
• 多重ドットトランジスタによる単電子転送動作シミュレーション
• 多重ドットトランジスタによる単電子転送動作シミュレーション(結晶成長,評価及びデバイス(化合物,Si,SiGe,電子・光材料))
• 多重ドットトランジスタによる単電子転送動作シミュレーション(結晶成長,評価及びデバイス(化合物,Si,SiGe,電子・光材料))
• 多重ドットトランジスタによる単電子転送動作シミュレーション(結晶成長,評価及びデバイス(化合物,Si,SiGe,電子・光材料))
• Si単一ドーパントデバイスとその特性(第18回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2010))
• Si単一ドーパントデバイスとその特性(第18回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2010))
• Tunneling current oscillations in Si/SiO_2/Si structures(結晶成長評価及びデバイス(化合物,Si, SiGe,その他の電子材料))
• リンをドープした単一および多重ドットSOI-FETによるフォトン検出(結晶成長,評価及びデバイス(化合物,Si,SiGe,電子・光材料))
• PドープSi SOI-MOSFETにおける単電子の帯電メモリ効果(結晶成長,評価及びデバイス(化合物,Si,SiGe,電子・光材料))
• リンをドープした単一および多重ドットSOI-FETによるフォトン検出(結晶成長,評価及びデバイス(化合物,Si,SiGe,電子・光材料))
• PドープSi SOI-MOSFETにおける単電子の帯電メモリ効果(結晶成長,評価及びデバイス(化合物,Si,SiGe,電子・光材料))
• PドープSi SOI-MOSFETにおける単電子の帯電メモリ効果(結晶成長,評価及びデバイス(化合物,Si,SiGe,電子・光材料))
• リンをドープした単一および多重ドットSOI-FETによるフォトン検出(結晶成長,評価及びデバイス(化合物,Si,SiGe,電子・光材料))
• Quantized electron transfer through random multiple tunnel junctions in phosphorus-doped silicon nanowires
• Time-controlled single-electron transfer in single-gated asymmetric multiple tunnel junction arrays
• Time-controlled single-electron transfer in single-gated asymmetric multiple tunnel junction arrays
• Quantum-Confinement Effect in Ultrathin Si Layer of Silicon-on-Insulator Substrate : Semiconductors
• Single-electron transfer between two donors in nanoscale thin silicon-on-insulator field-effect transistors
• Single-Electron Transfer by Inter-Dopant Coupling Tuning in Doped Nanowire Silicon-on-Insulator Field-Effect Transistors
• Single-Gated Single-Electron Transfer in Nonuniform Arrays of Quantum Dots
• Silicon nanodevice potential investigation by low temperature Kelvin Probe Force Microscope
• Dopant ionization in silicon nanodevices investigated by Kelvin Probe Force Microscope (シリコン材料・デバイス)
• Dopant ionization in silicon nanodevices investigated by Kelvin Probe Force Microscope (電子デバイス)
• Si単電子FETによるフォトン検出(第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• Si単電子FETによるフォトン検出(第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• Photo-illumination effects on the Si multiple-tunnel-junction single-hole devices
• Thermal Nitridation of Si(111) Surfaces with N_2 Molecules Studied by X-Ray Photoelectron Spectroscopy
• Ultra-Dry Oxidation for Improving the Time-Dependent Dielectric Breakdown Lifetime of Ultra-Thin Silicon Oxide Films
• Origin of Dark Regions in Scanning Tunneling Microscopy Images Formed by Thermal Oxidation of Si(111) Surface
• Energy Eigenvalues and Quantized Conductance Values of Electrons in Si Quantum Wires on {100} Plane
• Fabrication and Electrical Characteristics of Silicon Quantum Dot Devices
• Thermal Agglomeration of Thin Single Crystal Si on SiO_2 in Vacuum
• Light irradiation effect on single-hole-tunneling current of an SOI-FET(結晶成長評価及びデバイス(化合物,Si, SiGe,その他の電子材料))
• Photon irradiation effects on Si multiple-tunnel-junction field-effect transistors : Sensing the presence of a single-charge in the substrate
• Photon irradiation effects on Si multiple-tunnel-junction field-effect transistors : Sensing the presence of a single-charge in the substrate
• Si多重ドット構造における単一フォトン誘起ランダム・テレグラフ・シグナル(単電子/単光子検出とマニピュレーション)
• 人工転位網を内包したSOI構造を用いたシリコンナノデバイス(多量量子ドットと機能性)
• Si多重ドット構造における単一フォトン誘起ランダム・テレグラフ・シグナル(単電子/単光子検出とマニピュレーション)
• 人工転位網を内包したSOI構造を用いたシリコンナノデバイス(多量量子ドットと機能性)
• Single-photon-induced random telegraph signal in a two-dimensional multiple-tunnel-junction array
• Thermally-induced formation of Si wire array on an ultrathin (111) silicon-on-insulator substrate
• Concentration of Electric Field near Si Dot/Thermally-Grown SiO_2 Interface
• Capacitance-Voltage Study of Silicon-on-Insulator Structure with an Ultrathin Buried SiO_2 Layer Fabricated by Wafer Bonding
• Effects of Electron Tunneling into a Single-Crystalline Si Layer through an Ultrathin Buried Oxide
• Pドープ極薄SOI-MOSFETの単電子特性(結晶成長,評価及びデバイス(化合物,Si,SiGe,電子・光材料))
• Pドープ極薄SOI-MOSFETの単電子特性(結晶成長,評価及びデバイス(化合物,Si,SiGe,電子・光材料))
• Pドープ極薄SOI-MOSFETの単電子特性(結晶成長,評価及びデバイス(化合物,Si,SiGe,電子・光材料))
• Obsevation of the Crystallizing Front by Optical Microscope-TV System
• Effect of Homologous Impurity on the Solid-Solid Phase Transition of Normal-Alkane (Hexatriacontane) Crystal Studied by Time-Resolved X-Ray Measurements
• Investigation of the Molecular Orientation of Polyethylene in the Supercooled Melt State by X-ray Diffraction
• Si Pillar Formation and Height Countrol by Furnace Oxidation of the Si (111) Surface with Ultra-Small SiN Nuclei
• Si Pillar Formation and Height Control by Furnace Oxidation of the Si (111) Surface with Ultra-Small SiN Nuclei
• Photoluminescence from a Silicon Quantum Well Formed on Separation by Implanted Oxygen Substrate
• Thermal Stability of B-Doped SiGe Layers Formed on Si Substrates by Si-GeH_4-B_2H_6 Molecular Beam Epitaxy
• Quantized Conductance of a Silicon Wire Fabricated by Separation-by-Implanted-Oxygen Technology
• Photon irradiation effects on Si multiple-tunnel-junction field-effect transistors : Sensing the presence of a single-charge in the substrate
• Nanometer-Scale Local Oxidation of Si Using SiN Islands Formed in the Early Stages of Nitridation
• Multi-Charge Turnstile Operation in Random-Multidot Channel FET
• Fabrication of CoSi2-Buried-Metal-Layer Si Substrates for Infrared Reflection Absorption Spectroscopy by Wafer-Bonding
• Light irradiation effect on single-hole-tunneling current of an SOI-FET(結晶成長評価及びデバイス(化合物,Si,SiGe,その他の電子材料))
• Light irradiation effect on single-hole-tunneling current of an SOI-FET(結晶成長評価及びデバイス(化合物,Si, SiGe,その他の電子材料))
• Thermal Agglomeration of Ultrathin Si Layer on Buried SiO_2
• Thermally-Induced Structural Changes of Ultrathin Silicon-on-Insulator Structure
• Simulation of Visible Light Induced Effects in a Tunnel Junction Array for Photonic Device Applications
• Resonant Tunneling Effect in Si/SiO_2 Double Barrier Structure
• Single-Electron Charging in Phosphorus Donors in Silicon Observed by Low-Temperature Kelvin Probe Force Microscope
• Photoirradiation Effects in a Single-Electron Tunnel Junction Array (Special Issue on Technology Challenges for Single Electron Devices)
• Photo-Irradiation Effects in Single-Electron Tunnel Junction Arrays
• Simulations of Relaxation Processes for Non-Equilibrium Electron Distributions in Two-Dimensional Tunnel Junction Arrays ( Quantum Dot Structures)
• 光照射下でのSOI-FETsの間欠型電流(機能ナノデバイス及び関連技術)
• 極薄ナノスケールSiトランジスタにおける二つのドナー間単電子移動(機能ナノデバイス及び関連技術)
• 光照射下でのSOI-FETsの間欠型電流(機能ナノデバイス及び関連技術)
• 極薄ナノスケールSiトランジスタにおける二つのドナー間単電子移動(機能ナノデバイス及び関連技術)
• Fabrication of CoSi2-Buried-Metal-Layer Si Substrates for Infrared Reflection Absorption Spectroscopy by Wafer-Bonding
• 個々のドーパント原子を利用したシリコンナノデバイス : デバイス特性とフォトンセンシング機能
• 個々のドーパントポテンシャルと電子帯電のKFM観測(機能ナノデバイス及び関連技術)
• 個々のドーパントポテンシャルと電子帯電のKFM観測(機能ナノデバイス及び関連技術)
• 第一原理計算によるシリコンナノトランジスタ中の単一リン不純物の電子状態解析(機能ナノデバイス及び関連技術)
• 第一原理計算によるシリコンナノトランジスタ中の単一リン不純物の電子状態解析(機能ナノデバイス及び関連技術)
• Photoinduced Effects on Single-Charge Tunneling in a Si Two-Dimensional Multidot Field-Effect Transistor
• Thermal Agglomeration of Ultrathin Silicon-on-Insulator Layers: Crystalline Orientation Dependence
• Concentration of Electric Field near Si Dot/Thermally-Grown SiO2 Interface
• Single-Gated Single-Electron Transfer in Nonuniform Arrays of Quantum Dots
• Fowler–Nordheim Current Oscillations in Si(111)/SiO2/Twisted-Si(111) Tunneling Structures
• Photon-Induced Random Telegraph Signal Due to Potential Fluctuation of a Single Donor-Acceptor Pair in Nanoscale Si p-n Junctions

もっと見る 閉じる

スポンサーリンク