Burhanudin Zainal | Research Institue Of Electronics Shizuoka University

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概要

• BURHANUDIN Zainalの詳細を見る
• 同名の論文著者
• Research Institue Of Electronics Shizuoka Universityの論文著者

関連著者

• Tabe Michiharu

  Research Institue Of Electronics Shizuoka University

• Nuryadi Ratno

  Research Institue Of Electronics Shizuoka University

• Burhanudin Zainal

  Research Institue Of Electronics Shizuoka University

• Nuryadi Ratno

  Research Institute of Electronics, Shizuoka University

• BURHANUDIN Zainal

  Research Institue of Electronics, Shizuoka University

• TABE Michiharu

  Research Institute of Electronics, Shizuoka University

• Nuryadi Ratno

  Department Of Physics Faculty Of Science Shizuoka University

• Nuryadi Ratno

  Shizuoka Univ. Hamamatsu Jpn

• Tabe Michiharu

  Ntt Lsi Laboratories:(present Address)research Institute Of Electronics Shizuoka University

• Tare Michiharu

  Research Institue Of Electronics Shizuoka University

• ブルハヌディン ザイナル

  静岡大学電子工学研究所

• ブルハヌディン ザイナル

  Research Institue Of Electronics Shizuoka University

• 田部 道晴

  静岡大学 電子工学研究所

• Burhanudin Zainal

  Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan

• Fan Youjun

  Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan

• Nuryadi Ratno

  Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan

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著作論文

• Light irradiation effect on single-hole-tunneling current of an SOI-FET(結晶成長評価及びデバイス(化合物,Si, SiGe,その他の電子材料))
• Photon irradiation effects on Si multiple-tunnel-junction field-effect transistors : Sensing the presence of a single-charge in the substrate
• Photon irradiation effects on Si multiple-tunnel-junction field-effect transistors : Sensing the presence of a single-charge in the substrate
• Photon irradiation effects on Si multiple-tunnel-junction field-effect transistors : Sensing the presence of a single-charge in the substrate
• Light irradiation effect on single-hole-tunneling current of an SOI-FET(結晶成長評価及びデバイス(化合物,Si,SiGe,その他の電子材料))
• Light irradiation effect on single-hole-tunneling current of an SOI-FET(結晶成長評価及びデバイス(化合物,Si, SiGe,その他の電子材料))
• Thermal Agglomeration of Ultrathin Silicon-on-Insulator Layers: Crystalline Orientation Dependence

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