Nuryadi Ratno | Shizuoka Univ. Hamamatsu Jpn

スポンサーリンク

概要

関連著者

もっと見る

著作論文

Single-electron transfer in phosphorous-doped Si nanowire FETs
Time-controlled single-electron transfer in single-gated asymmetric multiple tunnel junction arrays
Tunneling current oscillations in Si/SiO_2/Si structures(結晶成長評価及びデバイス(化合物,Si,SiGe,その他の電子材料))
Tunneling current oscillations in Si/SiO_2/Si structures(結晶成長評価及びデバイス(化合物,Si, SiGe,その他の電子材料))
Charge polarization effect on single-hole-characteristics in a two-dimensional Si multidot structure
Ambipolar Coulomb Blockade Characteristics in a Two-Dimensional Si Multidot Device
Tunneling current oscillations in Si/SiO_2/Si structures(結晶成長評価及びデバイス(化合物,Si, SiGe,その他の電子材料))
Time-controlled single-electron transfer in single-gated asymmetric multiple tunnel junction arrays
Time-controlled single-electron transfer in single-gated asymmetric multiple tunnel junction arrays
Light irradiation effect on single-hole-tunneling current of an SOI-FET(結晶成長評価及びデバイス(化合物,Si, SiGe,その他の電子材料))
Single-photon-induced random telegraph signal in a two-dimensional multiple-tunnel-junction array
Thermally-induced formation of Si wire array on an ultrathin (111) silicon-on-insulator substrate
Obsevation of the Crystallizing Front by Optical Microscope-TV System
Effect of Homologous Impurity on the Solid-Solid Phase Transition of Normal-Alkane (Hexatriacontane) Crystal Studied by Time-Resolved X-Ray Measurements
Investigation of the Molecular Orientation of Polyethylene in the Supercooled Melt State by X-ray Diffraction
Light irradiation effect on single-hole-tunneling current of an SOI-FET(結晶成長評価及びデバイス(化合物,Si,SiGe,その他の電子材料))
Light irradiation effect on single-hole-tunneling current of an SOI-FET(結晶成長評価及びデバイス(化合物,Si, SiGe,その他の電子材料))
Thermal Agglomeration of Ultrathin Si Layer on Buried SiO_2
Thermally-Induced Structural Changes of Ultrathin Silicon-on-Insulator Structure
Simulation of Visible Light Induced Effects in a Tunnel Junction Array for Photonic Device Applications

もっと見る

スポンサーリンク