MORARU Daniel | Research Institute of Electronics, Shizuoka University

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著作論文

Design of dopant-induced quantum dot arrays in silicon nanostructures for single-electron transfer (シリコン材料・デバイス)
Design of dopant-induced quantum dot arrays in silicon nanostructures for single-electron transfer (電子デバイス)
Time-controlled single-electron transfer in single-gated asymmetric multiple tunnel junction arrays
Tunneling current oscillations in Si/SiO_2/Si structures(結晶成長評価及びデバイス(化合物,Si,SiGe,その他の電子材料))
Tunneling current oscillations in Si/SiO_2/Si structures(結晶成長評価及びデバイス(化合物,Si, SiGe,その他の電子材料))
Fowler-Nordheim Current Oscillations in Si(111)/SiO_2/Twisted-Si(111) Tunneling Structures
Tunneling current oscillations in Si/SiO_2/Si structures(結晶成長評価及びデバイス(化合物,Si, SiGe,その他の電子材料))
Time-controlled single-electron transfer in single-gated asymmetric multiple tunnel junction arrays
Time-controlled single-electron transfer in single-gated asymmetric multiple tunnel junction arrays
Single-Electron Transfer by Inter-Dopant Coupling Tuning in Doped Nanowire Silicon-on-Insulator Field-Effect Transistors
Single-Electron Charging in Phosphorus Donors in Silicon Observed by Low-Temperature Kelvin Probe Force Microscope
Single-Gated Single-Electron Transfer in Nonuniform Arrays of Quantum Dots
Fowler–Nordheim Current Oscillations in Si(111)/SiO2/Twisted-Si(111) Tunneling Structures
Photon-Induced Random Telegraph Signal Due to Potential Fluctuation of a Single Donor-Acceptor Pair in Nanoscale Si p-n Junctions

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