Fowler–Nordheim Current Oscillations in Si(111)/SiO2/Twisted-Si(111) Tunneling Structures
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概要
- 論文の詳細を見る
The dependence of Fowler–Nordheim current oscillations (FNCOs) on the twist angle between the facing Si layers in Si(111)/SiO2/Si(111) bonded structures is investigated. The observed systematic variation in oscillation amplitude with twist angle can be ascribed to transverse momentum conservation upon Fowler–Nordheim tunneling through thin SiO2. A calculation result, taking into account the twist-induced decrease in potential discontinuity and consequently in the reflection coefficient at the SiO2/twisted Si interface, provides the theoretical basis for the experimental results.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2006-03-25
著者
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Ikeda Hiroya
Research Institute Of Electronics Shizuoka University
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MORARU Daniel
Research Institute of Electronics, Shizuoka University
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KATO Hiroshi
Research Institute of Electronics, Shizuoka University
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Tabe Michiharu
Research Institue Of Electronics Shizuoka University
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Ishikawa Yasuhiko
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Horiguchi Seiji
Department Of Electrical And Electronic Engineering Akita University
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Ikeda Hiroya
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 432-8011, Japan
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Tabe Michiharu
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 432-8011, Japan
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Moraru Daniel
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 432-8011, Japan
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Horiguchi Seiji
Department of Electrical and Electronic Engineering, Akita University, 1-1 Tegata-Gakuen-machi, Akita 010-8502, Japan
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