Fabrication and Electrical Characteristics of Silicon Quantum Dot Devices

スポンサーリンク

概要

• 論文の詳細を見る
• 静岡大学の論文

著者

• TABE Michiharu

  Research Institute of Electronics, Shizuoka University

• Tabe Michiharu

  Research Institue Of Electronics Shizuoka University

• Takahashi Y

  Ntt Basic Research Laboratories Ntt Cornoration

• Takahashi Y

  Osaka University

• TAKAHASHI Yasuo

  NTT LSI Laboratories

• MURASE Katsumi

  NTT LSI Laboratories

• Murase Katsumi

  Ntt Basic Research Laboratories Ntt Corporation:(present)ntt Electronics Corporation (nel)

• Takahashi Yasuo

  The Tokyo Metropolitan Research Laboratory Of Public Health:graduate School Of Nutritional And Envir

• Takahashi Yasuo

  Faculty Of Pharmaceutical Sciences Tokyo University Of Science

関連論文

• Design of dopant-induced quantum dot arrays in silicon nanostructures for single-electron transfer (シリコン材料・デバイス)
• Design of dopant-induced quantum dot arrays in silicon nanostructures for single-electron transfer (電子デバイス)
• Single-electron transfer in phosphorous-doped Si nanowire FETs
• Time-controlled single-electron transfer in single-gated asymmetric multiple tunnel junction arrays
• Tunneling current oscillations in Si/SiO_2/Si structures(結晶成長評価及びデバイス(化合物,Si,SiGe,その他の電子材料))
• Tunneling current oscillations in Si/SiO_2/Si structures(結晶成長評価及びデバイス(化合物,Si, SiGe,その他の電子材料))
• Fowler-Nordheim Current Oscillations in Si(111)/SiO_2/Twisted-Si(111) Tunneling Structures
• Formation of Nanometer-Scale Dislocation Network Sandwiched by Silicon-on-Insulator Layers
• Charge polarization effect on single-hole-characteristics in a two-dimensional Si multidot structure
• Photoinduced Effects on Single-Charge Tunneling in a Si Two-Dimensional Multidot Field-Effect Transistor
• Artificial Dislocation Network in Silicon-on-Insulator Layer for Single-Electron Devices
• A Single-Electron-Transistor Logic Gate Family for Binary, Multiple-Valued and Mixed-Mode Logic(New System Paradigms for Integrated Electronics)
• A Simulation Methodology for Single-Electron Multiple-Valued Logics and Its Application to a Latched Parallel Counter
• Tunneling current oscillations in Si/SiO_2/Si structures(結晶成長評価及びデバイス(化合物,Si, SiGe,その他の電子材料))
• Novel-Functional Single-Electron Devices Using Silicon Nanodot Array
• Fabrication of double-dot single-electron transistor in silicon nanowire
• Novel-Functional Single-Electron Devices Using Silicon Nanodot Array
• Fabrication of double-dot single-electron transistor in silicon nanowire
• Transfer and Detection of Single Electrons Using Metal-Oxide-Semiconductor Field-Effect Transistors(Emerging Devices,Fundamentals and Applications of Advanced Semiconductor Devices)
• Charge-State Control of Phosphorus Donors in Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor
• Multifunctional Boolean Logic Using Single-Electron Transistors(New System Paradigms for Integrated Electronics)
• A Multiple-Valued Logic and Memory With Combined Single-Electron and Metal-Oxide-Semiconductor Transistors
• A Merged Single-Electron Transistor and Metal-Oxide-Semiconductor Transistor Logic for Interface and Multiple-Valued Functions
• Multipeak negative-differential-resistance device by combining single-electron and metal-oxide-semiconductor transistors
• A Merged SET-MOSFET Logic for Interface and Multiple-Valued Functions
• Time-controlled single-electron transfer in single-gated asymmetric multiple tunnel junction arrays
• Time-controlled single-electron transfer in single-gated asymmetric multiple tunnel junction arrays
• Voltage Gain of Si Single-Electron Transistor and Analysis of Performance of n-Metal-Oxide-Semiconductor Type Inverter with Resistive Load
• Single-Electron Detection in Si-Wire Transistors at Room Temperature
• Si Single-Electron Devices : Recent Attempts towards High Performance and Functionality
• A Si Memory Device Composed of a One-Dimensional Metal-Oxide-Semiconductor Field-Effect-Transistor Switch and a Single-Electron-Transistor Detector
• Sub-10-nm Overlay Accuracy in Electron Beam Lithography for Nanometer-Scale Device Fabrication
• Suppression of Effects of Parasitic Metal-Oxide-Semiconductor Field-Effect Transistors on Si Single-Electron Transistors
• Suppression of Unintentional Formation of Parasitic Si Islands on a Si Single-Electron Transistor by the Use of SiN Masked Oxidation
• Si Single-Electron Transistors on SIMOX Substrates (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
• Quantum-Confinement Effect in Ultrathin Si Layer of Silicon-on-Insulator Substrate : Semiconductors
• Single-Electron Transfer by Inter-Dopant Coupling Tuning in Doped Nanowire Silicon-on-Insulator Field-Effect Transistors
• Dopant ionization in silicon nanodevices investigated by Kelvin Probe Force Microscope (シリコン材料・デバイス)
• Dopant ionization in silicon nanodevices investigated by Kelvin Probe Force Microscope (電子デバイス)
• Photo-illumination effects on the Si multiple-tunnel-junction single-hole devices
• Thermal Nitridation of Si(111) Surfaces with N_2 Molecules Studied by X-Ray Photoelectron Spectroscopy
• Auger Analysis Across an Interface Between Cr Film and Pure Silica(Physics, Process, Instrument & Measurements)
• Effect of Si/SiO_2 Interface on Silicon and Boron Diffusion in Thermally Grown SiO_2
• Turnstile Operation Using a Silicon Dual-Gate Single-Electron Transistor
• Si Single-Electron Transistors with High Voltage Gain
• Mechanism of Potential Profile Formation in Silicon Single-Electron Transistors Fabricated Using Pattern-Dependent Oxidation : Semiconductors
• Single-Electron Transistor and Current-Switching Device Fabricated by Vertical Pattern-Dependent Oxidation
• Effect of Oxidation-Induced Strain on Potential Profile in Si SETs Using Pattern-Dependent Oxidation (PADOX)
• Fabrication of SiO_2/Si/SiO_2 Double Barrier Diodes using Two-Dimensional Si Structures
• Electron Tunneling from a Quantum Wire Formed at the Edge of a SIMOX-Si Layer
• Energy Eigenvalues and Quantized Conductance Values of Electrons in Si Quantum Wires on {100} Plane
• Fabrication and Electrical Characteristics of Silicon Quantum Dot Devices
• Novel Fabrication Technique for a Si Single-Electron Transistor and Its High Temperature Operation
• Thermal Agglomeration of Thin Single Crystal Si on SiO_2 in Vacuum
• Multifunctional device by using a quantum dot array
• Light irradiation effect on single-hole-tunneling current of an SOI-FET(結晶成長評価及びデバイス(化合物,Si, SiGe,その他の電子材料))
• Photon irradiation effects on Si multiple-tunnel-junction field-effect transistors : Sensing the presence of a single-charge in the substrate
• Photon irradiation effects on Si multiple-tunnel-junction field-effect transistors : Sensing the presence of a single-charge in the substrate
• Concentration of Electric Field near Si Dot/Thermally-Grown SiO_2 Interface
• Capacitance-Voltage Study of Silicon-on-Insulator Structure with an Ultrathin Buried SiO_2 Layer Fabricated by Wafer Bonding
• Effects of Electron Tunneling into a Single-Crystalline Si Layer through an Ultrathin Buried Oxide
• pH Dependence of Luminescence in Dye-Doped Sol-Gel Coating Film
• Si Pillar Formation and Height Countrol by Furnace Oxidation of the Si (111) Surface with Ultra-Small SiN Nuclei
• Si Pillar Formation and Height Control by Furnace Oxidation of the Si (111) Surface with Ultra-Small SiN Nuclei
• Ferroelectric Properties and Second Harmonic Intensities of Stillwellite-Type (La, Ln)BGeO_5 Crystallized Glasses(Optical Properties of Condensed Matter)
• Preparation and Characterization of Dye-Doped Zirconia Gel Films from Zirconium Tetra-n-butoxide Stabilized with Diethanolamine or Acetoin
• Lead Zirconate Titanate Thick Films Fabricated from Sols with and without Its Powder(Surfaces, Interfaces, and Films)
• Variation in Preferred Orientations of TiN Thin Films Prepared by Ion Beam Assisted Deposition
• Consideration of Deformation of TiN Thin Films with Preferred Orientation Prepared by Ion-Beam-Assisted Deposition
• Thin Film Transistor of ZnO Fabricated by Chemical Solution Deposition
• Pressure Effect on the Crystal Forms of RbCl and RbBr in Aqueous Solution
• Observation of Crystallization Process from Amorphous Bi_4Ti_3O_ Prepared by Rapid Quenching Method
• Mechanical Properties of TiN Films with the Preferred Orientations by Nano-Indentation Method
• Microwave Performance of 0.3-μm Gate-Length Multi-Finger AlGaN/GaN Heterojunction FETs with Minimized Current Collapse
• Cyclic Crystal Growth and Dissolution in a Closed System
• Temperature Dependent Surface Images of BaTiO_3 Observed by Atomic Force Microscopy
• Sampling Jitter and Finite Aperture Time Effects in Wideband Data Acquisition Systems(Special Section on Analog Circuit Techniques and Related Topics)
• Photon irradiation effects on Si multiple-tunnel-junction field-effect transistors : Sensing the presence of a single-charge in the substrate
• Nanometer-Scale Local Oxidation of Si Using SiN Islands Formed in the Early Stages of Nitridation
• Multi-Charge Turnstile Operation in Random-Multidot Channel FET
• Fabrication of CoSi2-Buried-Metal-Layer Si Substrates for Infrared Reflection Absorption Spectroscopy by Wafer-Bonding
• Analysis of CMOS ADC Nonlinear Input Capacitance
• Light irradiation effect on single-hole-tunneling current of an SOI-FET(結晶成長評価及びデバイス(化合物,Si,SiGe,その他の電子材料))
• Light irradiation effect on single-hole-tunneling current of an SOI-FET(結晶成長評価及びデバイス(化合物,Si, SiGe,その他の電子材料))
• Thermal Agglomeration of Ultrathin Si Layer on Buried SiO_2
• Thermally-Induced Structural Changes of Ultrathin Silicon-on-Insulator Structure
• Simulation of Visible Light Induced Effects in a Tunnel Junction Array for Photonic Device Applications
• Resonant Tunneling Effect in Si/SiO_2 Double Barrier Structure
• Single-Electron Charging in Phosphorus Donors in Silicon Observed by Low-Temperature Kelvin Probe Force Microscope
• Photoirradiation Effects in a Single-Electron Tunnel Junction Array (Special Issue on Technology Challenges for Single Electron Devices)
• Photo-Irradiation Effects in Single-Electron Tunnel Junction Arrays
• Simulations of Relaxation Processes for Non-Equilibrium Electron Distributions in Two-Dimensional Tunnel Junction Arrays ( Quantum Dot Structures)
• Fabrication of CoSi2-Buried-Metal-Layer Si Substrates for Infrared Reflection Absorption Spectroscopy by Wafer-Bonding
• Photoinduced Effects on Single-Charge Tunneling in a Si Two-Dimensional Multidot Field-Effect Transistor
• Thermal Agglomeration of Ultrathin Silicon-on-Insulator Layers: Crystalline Orientation Dependence
• Concentration of Electric Field near Si Dot/Thermally-Grown SiO2 Interface
• Single-Gated Single-Electron Transfer in Nonuniform Arrays of Quantum Dots
• Fowler–Nordheim Current Oscillations in Si(111)/SiO2/Twisted-Si(111) Tunneling Structures
• Photon-Induced Random Telegraph Signal Due to Potential Fluctuation of a Single Donor-Acceptor Pair in Nanoscale Si p-n Junctions

もっと見る 閉じる

スポンサーリンク