Novel Fabrication Technique for a Si Single-Electron Transistor and Its High Temperature Operation

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概要

• 論文の詳細を見る
• 1995-08-21

著者

• HORIGUCHI Seishi

  Optoelectronics Joint Research Laboratory

• Horiguchi Seiji

  Ntt Basic Research Laboratories

• Horiguchi Seiji

  Ntt Basic Research Laboratories Ntt Corporation

• Takahashi Y

  Hokkaido Univ. Sapporo‐shi Jpn

• Nagase M

  Ntt Basic Research Laboratories Ntt Corporation

• Takahashi Y

  Ntt Basic Research Laboratories Ntt Cornoration

• Takahashi Y

  Osaka University

• TAKAHASHI Yasuo

  NTT LSI Laboratories

• NAGASE Masao

  NTT LSI Laboratories

• NAMATSU Hideo

  NTT LSI Laboratories

• KURIHARA Kenji

  NTT LSI Laboratories

• IWADATE Kazumi

  NTT LSI Laboratories

• MURASE Katsumi

  NTT LSI Laboratories

• Murase Katsumi

  Ntt Basic Research Laboratories Ntt Corporation:(present)ntt Electronics Corporation (nel)

• HORIGUCHI Seiji

  NTT LSI Laboratories

• TABE Michiharu

  Shizuoka University

• NAKAJIMA Yasuyuki

  NTT LSI Laboratories

• Kurihara Kazuaki

  Plasma Research Center University Of Tsukuba:(present) Japan Atomic Energy Research Institute

• Kurihara Kazuaki

  Fujitsu Laboratories Inorganic Materials & Polymers Laboratory

• Nakajima Y

  Ntt Lsi Laboratories

• Namatsu H

  Ntt Basic Res. Lab. Kanagawa Jpn

• Iwadate K

  Ntt Lsi Laboratories

• Takahashi Yasuo

  Faculty Of Pharmaceutical Sciences Tokyo University Of Science

• Horiguchi Seiji

  Department of Electrical and Electronic Engineering, Faculty of Engineering and Resource Science, Akita University

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