Ge Atomic Layer Epitaxy by Use of Ar Ion Laser Heating : Beam Induced Physics and Chemistry

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1989-12-30

著者

• TAKAHASHI Yasuo

  NTT LSI Laboratories

• Urisu Tsuneo

  Ntt Lsi Laboratories 3-1

• Urisu Tsuneo

  Ntt Lsi Laboratories

• Takahashi Yasuo

  Ntt Lsi Laboratories 3-1

• SESE Yoshiteru

  Nagaoka University of Technokogy 1603-1

関連論文

• Si Single-Electron Transistors on SIMOX Substrates (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
• Electron Tunneling from a Quantum Wire Formed at the Edge of a SIMOX-Si Layer
• Energy Eigenvalues and Quantized Conductance Values of Electrons in Si Quantum Wires on {100} Plane
• Fabrication and Electrical Characteristics of Silicon Quantum Dot Devices
• Novel Fabrication Technique for a Si Single-Electron Transistor and Its High Temperature Operation
• Thermal Agglomeration of Thin Single Crystal Si on SiO_2 in Vacuum
• Photoluminescence from a Silicon Quantum Well Formed on Separation by Implanted Oxygen Substrate
• Quantized Conductance of a Silicon Wire Fabricated by Separation-by-Implanted-Oxygen Technology
• Self-Limiting Adsorption of SiCl_2H_2 and Its Application to the Layer-by-Layer Photochemical Process
• Measurements of Diffusion Coefficients of Water in Electron Cyclotron Resonance Plasma SiO_2
• Ge Atomic Layer Epitaxy by Use of Ar Ion Laser Heating : Beam Induced Physics and Chemistry
• Ge Atomic Layer Epitaxy by Use of Ar Ion Laser Heating

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