Quantized Conductance of a Silicon Wire Fabricated by Separation-by-Implanted-Oxygen Technology

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1995-02-28

著者

• HORIGUCHI Seishi

  Optoelectronics Joint Research Laboratory

• Horiguchi Seiji

  Ntt Basic Research Laboratories

• Horiguchi Seiji

  Ntt Basic Research Laboratories Ntt Corporation

• Takahashi Y

  Hokkaido Univ. Sapporo‐shi Jpn

• Tabe Michiharu

  Ntt Lsi Laboratories:(present Address)research Institute Of Electronics Shizuoka University

• TAKAHASHI Yasuo

  NTT LSI Laboratories

• NAMATSU Hideo

  NTT LSI Laboratories

• KURIHARA Kenji

  NTT LSI Laboratories

• IWADATE Kazumi

  NTT LSI Laboratories

• Tabe Michiharu

  Ntt Lsi Laboratories

• HORIGUCHI Seiji

  NTT LSI Laboratories

• NAKAJIMA Yasuyuki

  NTT LSI Laboratories

• Kurihara Kazuaki

  Plasma Research Center University Of Tsukuba:(present) Japan Atomic Energy Research Institute

• Kurihara Kazuaki

  Fujitsu Laboratories Inorganic Materials & Polymers Laboratory

• Nakajima Y

  Ntt Lsi Laboratories

• Namatsu H

  Ntt Basic Res. Lab. Kanagawa Jpn

• Iwadate K

  Ntt Lsi Laboratories

• Takahashi Yasuo

  Faculty Of Pharmaceutical Sciences Tokyo University Of Science

• Horiguchi Seiji

  Department of Electrical and Electronic Engineering, Faculty of Engineering and Resource Science, Akita University

関連論文

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• DLTS Study of Electron Traps in n-GaAs Grown by Gas Source Molecular Beam Epitaxy Using Triethylgallium and AsH_3
• Design of dopant-induced quantum dot arrays in silicon nanostructures for single-electron transfer (シリコン材料・デバイス)
• Design of dopant-induced quantum dot arrays in silicon nanostructures for single-electron transfer (電子デバイス)
• Single-electron transfer in phosphorous-doped Si nanowire FETs
• Time-controlled single-electron transfer in single-gated asymmetric multiple tunnel junction arrays
• Tunneling current oscillations in Si/SiO_2/Si structures(結晶成長評価及びデバイス(化合物,Si,SiGe,その他の電子材料))
• Tunneling current oscillations in Si/SiO_2/Si structures(結晶成長評価及びデバイス(化合物,Si, SiGe,その他の電子材料))
• Fowler-Nordheim Current Oscillations in Si(111)/SiO_2/Twisted-Si(111) Tunneling Structures
• A Single-Electron-Transistor Logic Gate Family for Binary, Multiple-Valued and Mixed-Mode Logic(New System Paradigms for Integrated Electronics)
• A Simulation Methodology for Single-Electron Multiple-Valued Logics and Its Application to a Latched Parallel Counter
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• Threshold Voltage of Si Single-Electron Transistor
• Microscopic Observations of Single-Electron Island in Si Single-Electron Transistors

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