Fabrication of double-dot single-electron transistor in silicon nanowire

スポンサーリンク

概要

• 論文の詳細を見る

• We propose a simple method for the fabrication of Si single-electron transistors (SET) with coupled dots by means of pattern-dependent oxidation (PADOX). It is well known that the PADOX convert a small one-dimensional Si wire formed on a silicon-on-insulator (SOI) substrate into a SET automatically. We demonstrated a fabrication of a double-dot Si SET when we oxidized specially designed Si nanowires formed on SOI substrates. We analyzed the measured electrical characteristics by fitting the simulation results and confirmed the double-dot formation and the position of the two dots in the Si wire.

• 社団法人電子情報通信学会の論文
• 2009-06-17

著者

• Arita Masashi

  Graduate School Of Information Science And Technology Hokkaido Univ.

• Ono Yukinori

  NTT Basic Research Laboratories

• Inokawa Hiroshi

  Research Institute of Electronics, Shizuoka University

• Ono Yukinori

  Ntt Basic Research Laboratories Nippon Telegraph And Telephone Corporation

• Ono Yukinori

  Ntt Basic Research Laboratories Ntt Cornoration

• Inokawa Hiroshi

  Research Institute Of Electronics Shizuoka Univ.

• TAKAHASHI Yasuo

  Graduate School of Information Science and Technology, Hokkaido University

• Choi Jung-bum

  Physics And Research Institute Of Nanoscience And Technology

• Takahashi Y

  Hokkaido Univ. Sapporo‐shi Jpn

• Arita Masashi

  Graduate School Of Engineering Hokkaido University

• Inokawa H

  Research Institute Of Electronics Shizuoka Univ.

• Takahashi Y

  Ntt Basic Research Laboratories Ntt Cornoration

• Takahashi Y

  Osaka University

• Fujiwara Akira

  NTT Basic Research Laboratories, NTT Corporation

• Jo Mingyu

  Graduate School of Information Science and Technology, Hokkaido Univ.

• Kaizawa Takuya

  Graduate School of Information Science and Technology, Hokkaido Univ.

• Kaizawa Takuya

  Graduate School Of Information Science And Technology Hokkaido Univ.

• Jo Mingyu

  Graduate School Of Information Science And Technology Hokkaido Univ.

• Fujiwara A

  Ntt Basic Research Laboratories Ntt Corporation

• Fujiwara A

  Ntt Corp. Atsugi Jpn

• Takahashi Yasuo

  Graduate School Of Information Science And Technology Hokkaido Univ.

• Fujiwara Akira

  Ntt Basic Research Laboratories Ntt Corporation

• Takahashi Y

  Graduate School Of Information Science And Technology Hokkaido Univ.

• Takahashi Yasuo

  The Tokyo Metropolitan Research Laboratory Of Public Health:graduate School Of Nutritional And Envir

• Takahashi Yasuo

  Faculty Of Pharmaceutical Sciences Tokyo University Of Science

• Takahashi Yasuo

  Graduate School of Engineering, Oita University

関連論文

• 28a-Q-3 La_xSr_TiO_3の光電子分光、X線内殻吸収及び逆光電子分光
• Two-Dimensional Spin Density Wave State in LaFeAsO
• Single-electron transfer in phosphorous-doped Si nanowire FETs
• Time-controlled single-electron transfer in single-gated asymmetric multiple tunnel junction arrays
• Formation of Nanometer-Scale Dislocation Network Sandwiched by Silicon-on-Insulator Layers
• Effect of UV/Ozone Treatment on Nanogap Electrodes for Molecular Devices
• Effect of UV/ozone Treatment of Nanogap Electrodes for Molecular Devices
• A Single-Electron-Transistor Logic Gate Family for Binary, Multiple-Valued and Mixed-Mode Logic(New System Paradigms for Integrated Electronics)
• A Simulation Methodology for Single-Electron Multiple-Valued Logics and Its Application to a Latched Parallel Counter
• Electron Microscopy of La_Ca_MnO_3
• Magnetic microstructure of NiFe/Cu/NiFe films observed by Lorentz microscopy
• Ion-Shadow Sputter for the Production of STM Tips
• Transmission electron microscopy of La_Ca_ MnO_3 CMR films
• A Field-Effect Transistor with a Deposited Graphite Thin Film
• Novel-Functional Single-Electron Devices Using Silicon Nanodot Array
• Fabrication of double-dot single-electron transistor in silicon nanowire
• Novel-Functional Single-Electron Devices Using Silicon Nanodot Array
• Fabrication of double-dot single-electron transistor in silicon nanowire
• Single-Electron-Resolution Electrometer Based on Field-Effect Transistor(Session4B: Emerging Devices II)
• Single-Electron-Resolution Electrometer Based on Field-Effect Transistor(Session4B: Emerging Devices II)
• Capacitive Parameter Extraction for Nanometer-Size Field-Effect Transistors
• Transfer and Detection of Single Electrons Using Metal-Oxide-Semiconductor Field-Effect Transistors(Emerging Devices,Fundamentals and Applications of Advanced Semiconductor Devices)
• Charge-State Control of Phosphorus Donors in Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor
• Multifunctional Boolean Logic Using Single-Electron Transistors(New System Paradigms for Integrated Electronics)
• Analysis of Back-Gate Voltage Dependence of Threshold Voltage of Thin Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor and Its Application to Si Single-Electron Transistor
• A Multiple-Valued Logic and Memory With Combined Single-Electron and Metal-Oxide-Semiconductor Transistors
• A Merged Single-Electron Transistor and Metal-Oxide-Semiconductor Transistor Logic for Interface and Multiple-Valued Functions
• Multipeak negative-differential-resistance device by combining single-electron and metal-oxide-semiconductor transistors
• A Merged SET-MOSFET Logic for Interface and Multiple-Valued Functions
• Photoemission Study of Substitution Effects on the Conduction-Band States in the Kondo Insulator YbB_ : Condensed Matter: Electronic Properties, etc.
• High-Resolution Photoemission Study of the Kondo Insulator YbB_
• Quantized electron transfer through random multiple tunnel junctions in phosphorus-doped silicon nanowires
• Time-controlled single-electron transfer in single-gated asymmetric multiple tunnel junction arrays
• Time-controlled single-electron transfer in single-gated asymmetric multiple tunnel junction arrays
• Voltage Gain of Si Single-Electron Transistor and Analysis of Performance of n-Metal-Oxide-Semiconductor Type Inverter with Resistive Load
• Single-Electron Detection in Si-Wire Transistors at Room Temperature
• Si Single-Electron Devices : Recent Attempts towards High Performance and Functionality
• A Si Memory Device Composed of a One-Dimensional Metal-Oxide-Semiconductor Field-Effect-Transistor Switch and a Single-Electron-Transistor Detector
• Sub-10-nm Overlay Accuracy in Electron Beam Lithography for Nanometer-Scale Device Fabrication
• Suppression of Effects of Parasitic Metal-Oxide-Semiconductor Field-Effect Transistors on Si Single-Electron Transistors
• Suppression of Unintentional Formation of Parasitic Si Islands on a Si Single-Electron Transistor by the Use of SiN Masked Oxidation
• Si Single-Electron Transistors on SIMOX Substrates (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
• Control of Electrical Properties of Single-walled Carbon Nanotubes by Low-energy Electron Irradiation
• Observation and Circuit Application of Negative Differential Conductance in Silicon Single-Electron Transistors
• Low Temperature Characteristics of Ambipolar SiO_2/Si/SiO_2 Hall-bar Devices
• Real-Time Observation of Single-Electron Movement through Silicon Single-Electron Transistor
• Effect of Si/SiO_2 Interface on Silicon and Boron Diffusion in Thermally Grown SiO_2
• Turnstile Operation Using a Silicon Dual-Gate Single-Electron Transistor
• Si Single-Electron Transistors with High Voltage Gain
• Mechanism of Potential Profile Formation in Silicon Single-Electron Transistors Fabricated Using Pattern-Dependent Oxidation : Semiconductors
• Single-Electron Transistor and Current-Switching Device Fabricated by Vertical Pattern-Dependent Oxidation
• Effect of Oxidation-Induced Strain on Potential Profile in Si SETs Using Pattern-Dependent Oxidation (PADOX)
• Fabrication of SiO_2/Si/SiO_2 Double Barrier Diodes using Two-Dimensional Si Structures
• Electron Tunneling from a Quantum Wire Formed at the Edge of a SIMOX-Si Layer
• Energy Eigenvalues and Quantized Conductance Values of Electrons in Si Quantum Wires on {100} Plane
• Fabrication and Electrical Characteristics of Silicon Quantum Dot Devices
• Novel Fabrication Technique for a Si Single-Electron Transistor and Its High Temperature Operation
• Thermal Agglomeration of Thin Single Crystal Si on SiO_2 in Vacuum
• Multifunctional Device Using Nanodot Array
• Multifunctional device by using a quantum dot array
• Nanoampere charge pumping by single-electron ratchet using Si nanowire MOSFETs
• Megabit-Class Size-Configurable 250-MHz SRAM Macrocells with a Squashed-Memory-Cell Architecture
• Thermally-induced formation of Si wire array on an ultrathin (111) silicon-on-insulator substrate
• Long-Distance Soliton Transmission up to 20 Gbit/s Using Alternating-Amplitude Solitons and Optical TDM
• In situ Conductance Measurement of a Limited Number of Nanoparticles during Transmission Electron Microscopy Observation
• pH Dependence of Luminescence in Dye-Doped Sol-Gel Coating Film
• Studies on MOSFET Low-Frequency Noise for Electrometer Applications
• Photoluminescence from a Silicon Quantum Well Formed on Separation by Implanted Oxygen Substrate
• Ferroelectric Properties and Second Harmonic Intensities of Stillwellite-Type (La, Ln)BGeO_5 Crystallized Glasses(Optical Properties of Condensed Matter)
• Preparation and Characterization of Dye-Doped Zirconia Gel Films from Zirconium Tetra-n-butoxide Stabilized with Diethanolamine or Acetoin
• Lead Zirconate Titanate Thick Films Fabricated from Sols with and without Its Powder(Surfaces, Interfaces, and Films)
• Variation in Preferred Orientations of TiN Thin Films Prepared by Ion Beam Assisted Deposition
• Consideration of Deformation of TiN Thin Films with Preferred Orientation Prepared by Ion-Beam-Assisted Deposition
• Thin Film Transistor of ZnO Fabricated by Chemical Solution Deposition
• Pressure Effect on the Crystal Forms of RbCl and RbBr in Aqueous Solution
• Observation of Crystallization Process from Amorphous Bi_4Ti_3O_ Prepared by Rapid Quenching Method
• Mechanical Properties of TiN Films with the Preferred Orientations by Nano-Indentation Method
• Quantized Conductance of a Silicon Wire Fabricated by Separation-by-Implanted-Oxygen Technology
• Sampling Jitter and Finite Aperture Time Effects in Wideband Data Acquisition Systems(Special Section on Analog Circuit Techniques and Related Topics)
• Analysis of CMOS ADC Nonlinear Input Capacitance
• Enhancing Single-Ion Detection Efficiency by Applying Substrate Bias Voltage for Deterministic Single-Ion Doping
• Use of finite element method for comparison of sound field diffuseness in reverberation rooms with and without absorption materials
• Electrical Characterization of Terphenyl-Based Molecular Devices
• Effect of UV/Ozone Treatment on Nanogap Electrodes for Molecular Devices
• Low-Temperature Characteristics of Ambipolar SiO2/Si/SiO2 Hall-Bar Devices
• Fabrication Method of Sub-100 nm Metal-Oxide-Semiconductor Field-Effect Transistor with Thick Gate Oxide
• Single-Photon Detection by a Simple Silicon-on-Insulator Metal--Oxide--Semiconductor Field-Effect Transistor
• Effect of Arrangement of Input Gates on Logic Switching Characteristics of Nanodot Array Device
• Studies on Metal–Oxide–Semiconductor Field-Effect Transistor Low-Frequency Noise for Electrometer Applications
• Ferromagnetism of Manganese–Silicide Nanopariticles in Silicon
• The Observation of "Conduction Spot" on NiO Resistance Random Access Memory
• In situ Conductance Measurement of a Limited Number of Nanoparticles during Transmission Electron Microscopy Observation
• Back-Gate Effect on Coulomb Blockade in Silicon-on-Insulator Trench Wires
• Single-Electron-Resolution Electrometer Based on Field-Effect Transistor
• Multifunctional Device Using Nanodot Array
• Real-Time Observation of Single-Electron Movement through Silicon Single-Electron Transistor
• Field-Effect Transistor with Deposited Graphite Thin Film
• Turnstile Operation Using a Silicon Dual-Gate Single-Electron Transistor
• Electron Microscopy of La0.7Ca0.3MnO3
• Tunnel Conductance through One or a Few Fe Particles Embedded in an MgO Matrix

もっと見る 閉じる

スポンサーリンク