Real-Time Observation of Single-Electron Movement through Silicon Single-Electron Transistor
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概要
- 論文の詳細を見る
We fabricated, for the first time, a device, which enables us to monitor the transport of individual electrons through a silicon single-electron transistor (SET). The device was fabricated on a silicon-on-insulator substrate. In the device, there is a large extra island in one of the SET leads, which exchanges electrons with the SET. The device also has an electrometer whose current level is sensitive to the potential of the extra island. We observed, at 25 K, that the electrometer current changed in a step like manner as a function of time, which is ascribed to the abrupt change in the extra-island potential due to single-electron movement via the SET. This shows that the present structure makes it possible to investigate tunneling dynamics in a silicon SET and to evaluate transfer accuracy of recently demonstrated silicon-based single-charge-transfer devices.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-10-15
著者
-
Ono Yukinori
NTT Basic Research Laboratories
-
Kim Sang
Ntt Basic Research Laboratories Ntt Corporation
-
Takahashi Yasuo
Ntt Basic Research Laboratories Ntt Corporation
-
Choi Jung
Department Of Agricultural Biotechnology Seoul National University
-
Choi Jung
Department of Physics, Chungbuk National University, 48 Gaesin, Cheongju, Chungbuk 361-763, Korea
-
Kim Sang
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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