A Si Memory Device Composed of a One-Dimensional Metal-Oxide-Semiconductor Field-Effect-Transistor Switch and a Single-Electron-Transistor Detector

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1999-04-30

著者

• Takahashi Y

  Hokkaido Univ. Sapporo‐shi Jpn

• Takahashi Y

  Ntt Basic Research Laboratories Ntt Cornoration

• Fujiwara Akira

  NTT Basic Research Laboratories, NTT Corporation

• TAKAHASHI Yasuo

  NTT Basic Research Laboratories, NTT Corporation

• Fujiwara A

  Ntt Basic Research Laboratories Ntt Corporation

• Fujiwara A

  Ntt Corp. Atsugi Jpn

• MURASE Katsumi

  NTT Basic Research Laboratories, NTT Corporation

• YAMAZAKI Kenji

  NTT Basic Research Laboratories

• NAMATSU Hideo

  NTT Basic Research Laboratories

• KURIHARA Kenji

  NTT Basic Research Laboratories

• KURIHARA Kenji

  NTT LSI Laboratories

• Murase Katsumi

  Ntt Basic Research Laboratories Ntt Corporation:(present)ntt Electronics Corporation (nel)

• Fujiwara Akira

  Ntt Basic Research Laboratories Ntt Corporation

• Yamazaki K

  Ntt Corp. Kanagawa Jpn

• Kajiwara Ken

  Plasma Research Center University Of Tsukuba:(present)naka Fusion Research Establishment Japan Atomi

• Kurihara Kazuaki

  Plasma Research Center University Of Tsukuba:(present) Japan Atomic Energy Research Institute

• Yamazaki K

  Ntt Basic Research Laboratories Ntt Corporation

• Kurihara Kazuaki

  Fujitsu Laboratories Inorganic Materials & Polymers Laboratory

• Yamazaki Katsuyuki

  The Faculty Of Engineering Tokyo Institute Of Technology : (presently) Canon Inc.

• Namatsu H

  Ntt Basic Res. Lab. Kanagawa Jpn

• Takahashi Yasuo

  Faculty Of Pharmaceutical Sciences Tokyo University Of Science

• Takahashi Yasuo

  Ntt Basic Research Laboratories Ntt Corporation

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